JANTXV2N5796U/TR

Overview

The JANTXV2N5796U/TR is a dual PNP small-signal bipolar junction transistor manufactured by Microchip Technology. It utilizes silicon technology and is designed for surface-mount applications in an SMD/SMT package configuration. The device supports a collector-emitter voltage of 60 V and a collector-base voltage of 60 V, with an emitter-base voltage rating of 5 V. Maximum power dissipation is specified at 5 W, allowing operation within a temperature range from -65°C to +175°C. The component features a maximum DC current gain (hFE) of 300 at 150 mA and 10 V, with a collector-emitter saturation voltage of 1.6 V.

Feature Summary

• Dual PNP configuration integrated into a single surface-mount package
• High power dissipation capability of 5 W for robust thermal performance
• Extended operating temperature range suitable for extreme environments

Applications

• Military aerospace electronic systems requiring radiation-hardened or high-reliability components
• Spacecraft avionics and satellite communication subsystems
• Harsh environment industrial control circuits demanding wide temperature stability

Procurement Notes

Verify the specific suffix U/TR against official Microchip documentation to confirm tape-and-reel packaging and exact electrical binning. Confirm that the JANTXV designation aligns with required military qualification standards such as MIL-PRF-19500. Request current manufacturing status and lead times directly from authorized distributors, as availability may vary due to long production cycles typical of specialized semiconductor components.

Selection Notes

Select this component when a dual PNP topology is required in a surface-mount form factor with high power handling capabilities. Ensure the design accommodates the 5 W power dissipation limit and the -65°C to +175°C operating range. Compare hFE specifications against circuit requirements, noting the maximum gain of 300 at 150 mA. Verify that the 60 V voltage ratings are sufficient for the intended application voltages.

Part Context

This part belongs to the JANTXV series of dual small-signal BJTs produced by Microchip Technology. It shares the core 2N5796 specification but includes specific packaging and qualification attributes indicated by the suffix. The series is generally targeted toward high-reliability sectors where standard commercial components are unsuitable due to environmental or durability constraints.

Replacement Considerations

Direct replacements must match the dual PNP configuration, 60 V ratings, and 5 W power dissipation. Verify pinout compatibility for surface-mount installation. Consider equivalent parts from other manufacturers offering military-grade dual BJTs with similar thermal and electrical characteristics.