JANTXV2N5796U

JANTXV2N5796U

$117.67
  • Description:TRANS 2PNP DUAL 60V 600MA 6-SMD
  • Series:-

SKU:1fbf454b182e Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS 2PNP DUAL 60V 600MA 6-SMD
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:2 PNP (Dual)
  • Current - Collector (Ic) (Max):600mA
  • Voltage - Collector Emitter Breakdown (Max):60V
  • Vce Saturation (Max) @ Ib, Ic:1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
  • Power - Max:600mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-SMD, No Lead
  • Supplier Device Package:6-SMD
  • Grade:Military
  • Qualification:MIL-PRF-19500/496

Download product information

JANTXV2N5796U

Overview

The JANTXV2N5796U is a dual small-signal PNP bipolar junction transistor manufactured by Microchip Technology. It utilizes silicon technology and is housed in an SMD/SMT package configuration. The device supports a maximum collector-emitter voltage (VCEO) of 60 V and a collector-base voltage (VCBO) of 60 V, with an emitter-base voltage (VEBO) rating of 5 V. Power dissipation capability is specified at 5 W. The component operates within a temperature range from -65 °C to +175 °C. DC current gain (hFE) reaches a maximum of 300 at 150 mA and 10 V, while the collector-emitter saturation voltage is 1.6 V.

Feature Summary

  • Dual PNP configuration for compact circuit integration
  • High power dissipation capability suitable for demanding applications
  • Extended thermal operating range up to 175 °C

Applications

  • Military aerospace systems requiring radiation-hardened components
  • High-reliability signal processing circuits
  • Harsh environment control systems

Procurement Notes

Verify the specific ordering suffix and manufacturer lot codes against official Microchip documentation before procurement. Ensure compliance with military-grade quality standards and traceability requirements. Confirm that the component meets all necessary environmental and reliability certifications for the intended deployment scenario.

Selection Notes

Select this component when a dual PNP BJT with high power handling and wide temperature tolerance is required. Compare electrical parameters such as hFE and saturation voltage against circuit requirements. Ensure the SMD package type aligns with the PCB layout and assembly capabilities available for the design.

Part Context

This part belongs to the JANTXV series of dual small-signal BJTs produced by Microchip Technology. The series is designed for high-reliability applications, often serving as replacements or upgrades for legacy military specifications. It shares functional similarities with other dual PNP transistors but offers specific performance characteristics defined by its datasheet.

Replacement Considerations

Consult official substitution guides for verified equivalents. Generic commercial alternatives may not meet the required reliability or environmental standards.

JANTXV2N5796UJANTXV2N5796U
$117.67
Buy Now