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The JANTXV2N5796U is a dual small-signal PNP bipolar junction transistor manufactured by Microchip Technology. It utilizes silicon technology and is housed in an SMD/SMT package configuration. The device supports a maximum collector-emitter voltage (VCEO) of 60 V and a collector-base voltage (VCBO) of 60 V, with an emitter-base voltage (VEBO) rating of 5 V. Power dissipation capability is specified at 5 W. The component operates within a temperature range from -65 °C to +175 °C. DC current gain (hFE) reaches a maximum of 300 at 150 mA and 10 V, while the collector-emitter saturation voltage is 1.6 V.
Verify the specific ordering suffix and manufacturer lot codes against official Microchip documentation before procurement. Ensure compliance with military-grade quality standards and traceability requirements. Confirm that the component meets all necessary environmental and reliability certifications for the intended deployment scenario.
Select this component when a dual PNP BJT with high power handling and wide temperature tolerance is required. Compare electrical parameters such as hFE and saturation voltage against circuit requirements. Ensure the SMD package type aligns with the PCB layout and assembly capabilities available for the design.
This part belongs to the JANTXV series of dual small-signal BJTs produced by Microchip Technology. The series is designed for high-reliability applications, often serving as replacements or upgrades for legacy military specifications. It shares functional similarities with other dual PNP transistors but offers specific performance characteristics defined by its datasheet.
Consult official substitution guides for verified equivalents. Generic commercial alternatives may not meet the required reliability or environmental standards.