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The JANTXV2N6989 is a silicon NPN quad small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It integrates four independent NPN transistors within a single TO-116-14 through-hole package. The device supports a maximum collector current of 800 mA and a collector-emitter breakdown voltage of 50 V. It features a power dissipation rating of 1.5 W and operates across an extended temperature range from -65°C to +200°C junction temperature. This component is designed for high-reliability applications requiring robust switching capabilities in harsh environments.
Verify the specific ordering suffix and manufacturer lot codes upon receipt to ensure compliance with military standards. Confirm that the component matches the required radiation hardness levels for your specific application environment. Check for any recent manufacturing changes or packaging updates issued by Microchip Technology before final integration.
Select this component when a quad NPN configuration is required in a through-hole format for high-temperature operation. Ensure the circuit design accommodates the 50 V collector-emitter voltage limit and 1.5 W thermal constraints. Consider the TO-116-14 package dimensions for PCB layout compatibility and verify that the switching speed meets the system requirements.
This part belongs to the 2N6989 family of quad NPN transistors produced by Microchip Technology under its Microsemi division. It is specifically designated for military and aerospace use, adhering to strict reliability standards. The JANTXV prefix indicates a screened version of the standard 2N6989 device, optimized for enhanced performance in demanding operational conditions.
Direct substitutes include JAN2N6989U/TR for surface mount applications and standard commercial grade 2N6989 if military screening is not required. Verify pinout compatibility and electrical parameter margins before swapping between these variants.