JS28F00AP33BFA

Memory IC Overview

The JS28F00AP33BFA is a 1Gb Parallel NOR Flash memory device manufactured using Micron's 65nm process technology. It features a 16-bit data bus and operates with VCC (core) and VCCQ (I/O) voltages ranging from 2.3V to 3.6V. The component utilizes Multi-Level Cell (MLC) architecture and offers an asymmetrically blocked configuration with four 32KB parameter blocks in a bottom or top arrangement, alongside 128KB main blocks. It supports asynchronous page reads at 25ns and synchronous burst reads up to 52MHz with zero wait states on compatible packages.

Memory IC Feature Summary

• Supports high-performance synchronous burst read mode synchronized with a user-supplied clock signal
• Incorporates Buffered Enhanced Factory Programming (BEFP) for fast factory program and erase operations
• Provides flexible security options including individual block locking, lock-down, password access, and selectable OTP space
• Features a WAIT signal for easy CPU-to-flash memory synchronization

Memory IC Applications

• Code storage applications requiring high-speed interface
• Data storage systems utilizing low-voltage operation
• Embedded memory solutions optimized for code execution

Memory IC Procurement Notes

Verify the specific ordering suffix against official Micron documentation to confirm package type and boot configuration. Ensure compatibility with system voltage requirements of 2.3V to 3.6V for both core and I/O supplies. Confirm that the target application supports the 16-bit data bus width and the specific asymmetric block architecture defined for this part number.

Memory IC Selection Notes

Select this component when a 1Gb density with a 16-bit parallel interface is required. It is suitable for designs needing synchronous burst capabilities and flexible block protection schemes. Consider the 65nm process technology benefits regarding density and cost. Verify that the system can accommodate the specified operating temperature range and power consumption characteristics during active and standby modes.

Memory IC Part Context

This device belongs to the Micron P33-65nm Parallel NOR Flash family. It shares architectural similarities with other parts in the series, such as the JS28F512P33BFD and JS28F00AP33TFA, differing primarily in density and specific block configurations. The family is characterized by its support for both asynchronous and synchronous read modes and its use of MLC technology for high-density storage.

Memory IC Replacement Considerations

PC28F00AP33BFA is a confirmed substitute offering identical specifications in a 64-ball Easy BGA package.