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K2325TJ650
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Product Detailed Parameters
- Description：SCR 6.5KV 4625A W81
- Series：-
- Mfr：IXYS
- Package：Box
- Voltage - Off State：6.5 kV
- Voltage - Gate Trigger (Vgt) (Max)：3 V
- Current - Gate Trigger (Igt) (Max)：300 mA
- Current - Hold (Ih) (Max)：1:00 AM
- Current - Non Rep. Surge 50, 60Hz (Itsm)：36300A @ 50Hz
- SCR Type：Standard Recovery
- Operating Temperature：-40°C ~ 125°C
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：TO-200AF
- Supplier Device Package：W81
- Voltage - On State (Vtm) (Max)：4.2 V
- Current - On State (It (AV)) (Max)：2380 A
- Current - On State (It (RMS)) (Max)：4625 A
- Current - Off State (Max)：200 mA
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Overview
The K2325TJ650 is a medium voltage Silicon Controlled Rectifier (SCR) manufactured by IXYS. It features an off-state repetitive peak voltage of 6.5 kV and supports a maximum on-state RMS current of 4625 A, with a maximum average on-state current of 2380 A. The device utilizes a TO-200AF package for high-power applications. Gate trigger current is rated at a maximum of 300 mA. This component is designed for robust performance in demanding industrial power conversion systems requiring high voltage blocking capabilities.
Feature Summary
- High voltage blocking capability up to 6.5 kV
- Supports high RMS on-state current of 4625 A
- Utilizes TO-200AF package for thermal management
Applications
- Medium voltage thyristor applications
- Industrial power conversion systems
- High voltage DC transmission components
Procurement Notes
Verify the specific datasheet version and electrical characteristics against official IXYS documentation before integration. Confirm that the TO-200AF mechanical dimensions match the target assembly requirements. Ensure gate drive circuits are capable of delivering the specified 300 mA trigger current reliably under all operating conditions.
Selection Notes
Select this component when system design requires a 6.5 kV blocking voltage and high current handling capacity exceeding standard low-voltage SCRs. Consider the TO-200AF package constraints for mounting and cooling infrastructure. Evaluate thermal resistance parameters to ensure junction temperature limits are not exceeded during continuous operation at 4625 A RMS.
Part Context
The K2325TJ650 belongs to the medium voltage thyristor family from IXYS, specifically engineered for high-power industrial applications. It serves as a critical switching element in systems where high voltage isolation and significant current carrying capacity are mandatory. The device complements other high-voltage semiconductor solutions within the manufacturer's portfolio.
Replacement Considerations
Public confirmed substitute part numbers include ATDK2325TJ650 and ENERGITM equivalents. Verify electrical compatibility and mechanical fit before substitution.
