K4A4G085WE-BCRC

$2.98

Description：DDR4-2400 4GB (512MX8)0.833NS CL
Series：-
Mfr：Samsung Semiconductor, Inc.
Package：Tape & Reel (TR)

SKU:ce80f92a0169 Category: Memory IC Brand: Samsung Semiconductor, Inc.

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Product introduction

K4A4G085WE-BCRC is listed in the Memory IC range at ChipApex. The manufacturer field lists Samsung Semiconductor, Inc.. Its product description is DDR4-2400 4GB (512MX8)0.833NS CL. Review the specifications below when checking this part for your BOM.

Memory IC specifications for K4A4G085WE-BCRC

Description：DDR4-2400 4GB (512MX8)0.833NS CL
Series：-
Mfr：Samsung Semiconductor, Inc.
Package：Tape & Reel (TR)
Memory Type：Volatile
Memory Format：DRAM
Technology：-
Memory Size：4Gbit
Memory Organization：512M x 8
Memory Interface：Parallel
Clock Frequency：-
Write Cycle Time - Word, Page：-
Voltage - Supply：1.2V
Operating Temperature：0°C ~ 95°C
Mounting Type：Surface Mount
Package / Case：78-FBGA
Supplier Device Package：-
Access Time：-
Grade：-
Qualification：-

Memory IC datasheet and documents for K4A4G085WE-BCRC

K4A4G085WE-BCRC

Memory IC Overview

The K4A4G085WE-BCRC is a 4Gb DDR4 SDRAM component manufactured by Samsung Semiconductor. It utilizes an E-die architecture and features a 256M x 8 organization structure. The device operates at a standard voltage of 1.2V with a specified operating temperature range of 0°C to +85°C. It is housed in a 78-ball FBGA package, designed for high-density memory applications requiring efficient space utilization and reliable data retention.

Memory IC Feature Summary

Supports high-speed double data rate transfers up to 2666 Mbps per pin
Incorporates on-die termination (ODT) and ZQ internal self-calibration
Features asynchronous reset, write CRC check, and command/address parity
Utilizes an 8-bit prefetch architecture for efficient data processing

Memory IC Applications

Smart electronics and consumer devices
Smart TV and monitor manufacturing
Embedded systems and industrial control
Portable medical equipment

Memory IC Procurement Notes

Verify the specific suffix against official Samsung documentation to confirm exact speed grade and package variant. Ensure compatibility with system power requirements and thermal limits. Confirm that the 78-ball FBGA footprint matches the target PCB design. Cross-reference ordering information directly with authorized distributors to avoid counterfeit components.

Memory IC Selection Notes

Select this component for designs requiring 4Gb density within a compact 78-ball form factor. It is suitable for applications prioritizing low power consumption via 1.2V operation. Consider its support for advanced reliability features like CRC when designing for critical data environments. Evaluate board space constraints against the FBGA package dimensions.

Memory IC Part Context

This part belongs to Samsung's DDR4 SDRAM family, specifically utilizing the E-die technology node. It represents an evolution in performance and efficiency compared to previous generations. The series targets markets demanding higher bandwidth and lower energy usage, aligning with modern mobile and embedded computing standards.