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K4B1G1646I-BYMA000 is listed in the Memory IC range at ChipApex. The manufacturer field lists Samsung Semiconductor, Inc.. Its product description is DDR3-1866 1GB (64MX16)1.07NS CL1. Review the specifications below when checking this part for your BOM.
Memory IC specifications for K4B1G1646I-BYMA000
- Description：DDR3-1866 1GB (64MX16)1.07NS CL1
- Series：-
- Mfr：Samsung Semiconductor, Inc.
- Package：Tray
- Memory Type：Volatile
- Memory Format：DRAM
- Technology：-
- Memory Size：1Gbit
- Memory Organization：64M x 16
- Memory Interface：Parallel
- Clock Frequency：933 MHz
- Write Cycle Time - Word, Page：-
- Voltage - Supply：1.35V
- Operating Temperature：0°C ~ 95°C
- Mounting Type：Surface Mount
- Package / Case：96-TFBGA
- Supplier Device Package：-
- Access Time：-
- Grade：-
- Qualification：-
Memory IC datasheet and documents for K4B1G1646I-BYMA000
Memory IC Overview
The K4B1G1646I-BYMA is a Samsung DDR3 SDRAM component with a 1 Gbit storage capacity. It operates at a voltage of 1.35V and supports a data rate of 1866 Mbps. The device features a 64M x 16 organization and utilizes a 96-ball FBGA package. It is designed for commercial temperature ranges, functioning between 0°C and +85°C.
Memory IC Feature Summary
- Provides enhanced bandwidth and reliability compared to previous generation memory solutions.
- Delivers low power consumption with up to 30% reduction in power usage versus DDR2.
- Supports high-speed data transfer rates suitable for demanding computing environments.
Memory IC Applications
- Notebook computers
- Desktop systems
- Industrial solutions including automotive applications
Memory IC Procurement Notes
Verify the exact suffix against official Samsung documentation to confirm speed grade and temperature range. Ensure compatibility with system VDD/VDDQ requirements of 1.35V or 1.5V. Confirm package integrity and pin alignment for the 96FBGA form factor before integration into PCB designs.
Memory IC Selection Notes
Select this component for systems requiring 1 Gbit density with 16-bit width. Verify that the host controller supports DDR3 1866 Mbps speeds. Ensure thermal management accommodates the commercial operating range of 0°C to +85°C. Check board space constraints for the 96-ball FBGA footprint.
Memory IC Part Context
This part belongs to the Samsung DDR3 family, developed as an industry-first solution in 2005. It represents a significant evolution from DDR2, offering double the bandwidth and improved energy efficiency. The series is widely adopted across consumer electronics and industrial sectors for its balance of performance and power savings.
Memory IC Replacement Considerations
Compatible substitutes within the same family include K4B1G1646I-BCMA and K4B1G1646I-BYNB. These variants share the same core architecture but differ in speed grades and temperature specifications. Verify electrical parameters match the target application requirements before substitution.
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