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K4B4G1646E-BYK000 is listed in the Memory IC range at ChipApex. The manufacturer field lists Samsung Semiconductor, Inc.. Its product description is DDR3-1600 4GB (256MX16)1.25NS CL. Review the specifications below when checking this part for your BOM.
Memory IC specifications for K4B4G1646E-BYK000
- Description：DDR3-1600 4GB (256MX16)1.25NS CL
- Series：-
- Mfr：Samsung Semiconductor, Inc.
- Package：Tray
- Memory Type：Volatile
- Memory Format：DRAM
- Technology：-
- Memory Size：4Gbit
- Memory Organization：256M x 16
- Memory Interface：Parallel
- Clock Frequency：800 MHz
- Write Cycle Time - Word, Page：-
- Voltage - Supply：1.35V
- Operating Temperature：0°C ~ 95°C
- Mounting Type：Surface Mount
- Package / Case：96-TFBGA
- Supplier Device Package：-
- Access Time：-
- Grade：-
- Qualification：-
Memory IC datasheet and documents for K4B4G1646E-BYK000
Memory IC Overview
The K4B4G1646E-BYK000 is a 4Gb E-die DDR3L SDRAM component manufactured by Samsung Semiconductor. It features a 16-bit data width and operates within a voltage range of 1.425V to 1.575V. The device supports a maximum clock frequency of 933MHz with an access time of 0.225ns. It utilizes a 96-pin FBGA package measuring 13.30 x 7.50mm with a height of 1.10mm. Designed for low-power applications, it complies with RoHS standards and functions within an operating temperature range of 0°C to +95°C.
Memory IC Feature Summary
- Supports low-voltage operation at 1.5V nominal for enhanced power efficiency
- Utilizes E-die technology for optimized density and performance
- Features a compact 96-ball FBGA package suitable for space-constrained designs
Memory IC Applications
- Mobile devices requiring high-density memory in small form factors
- Industrial solutions including automotive and medical equipment
- Notebooks and desktop systems utilizing DDR3L architecture
Memory IC Procurement Notes
Verify the specific suffix BYK000 against official Samsung documentation to confirm pinout and electrical characteristics. Ensure compatibility with system voltage requirements of 1.425V to 1.575V. Confirm package dimensions match the 13.30 x 7.50mm footprint. Validate RoHS compliance status for your region. Check for active lifecycle status before integration.
Memory IC Selection Notes
Select this component when designing systems that require 4Gb capacity with a 16-bit interface. It is suitable for platforms supporting DDR3L speeds up to 933MHz. Consider the 0°C to +95°C operating range for environmental constraints. The FBGA-96 package is ideal for surface-mount assembly in portable electronics.
Memory IC Part Context
This part belongs to the Samsung K4B4G1646E series, which represents 4Gb E-die DDR3L SDRAM. The series is designed to provide higher bandwidth and lower power consumption compared to previous generations. It serves as a key memory solution for mobile and industrial applications demanding reliable data storage.
Memory IC Replacement Considerations
Compatible alternatives include other 4Gb DDR3L SDRAM parts from Samsung or Hynix with matching 16-bit widths and FBGA-96 packages. Verify electrical specifications and pin configurations before substitution.
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