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K4F6E3S4HM-MGCJ is listed in the Memory IC range at ChipApex. The manufacturer field lists Samsung Semiconductor, Inc.. Its product description is LPDDR4 16Gb x32 3733 Mbps 1.1v. Review the specifications below when checking this part for your BOM.
Memory IC specifications for K4F6E3S4HM-MGCJ
- Description：LPDDR4 16Gb x32 3733 Mbps 1.1v
- Series：-
- Mfr：Samsung Semiconductor, Inc.
- Package：Tray
- Memory Type：Volatile
- Memory Format：DRAM
- Technology：-
- Memory Size：16Gbit
- Memory Organization：512M x 32
- Memory Interface：Parallel
- Clock Frequency：1866 MHz
- Write Cycle Time - Word, Page：-
- Voltage - Supply：1.1V
- Operating Temperature：-25°C ~ 85°C
- Mounting Type：Surface Mount
- Package / Case：200-TFBGA
- Supplier Device Package：-
- Access Time：-
- Grade：-
- Qualification：-
Memory IC datasheet and documents for K4F6E3S4HM-MGCJ
Memory IC Overview
The K4F6E3S4HM-MGCJ is a 16Gb LPDDR4 SDRAM manufactured by Samsung Semiconductor. It features an x32 organization and operates at a data rate of 3733 Mbps with a clock frequency of 1.866 GHz. The device utilizes a 1.1V supply voltage and is housed in a 200-ball FBGA package. It supports an extended operating temperature range from -25°C to +85°C.
Memory IC Feature Summary
- Supports high-speed data transfer rates up to 3733 Mbps for efficient bandwidth management.
- Integrates low-voltage architecture operating at 1.1V to optimize power consumption.
- Includes dynamic on-die termination and ZQ calibration for signal integrity.
Memory IC Applications
- High-performance mobile smartphones
- Tablets and portable computing devices
- AI edge devices requiring balanced performance and power efficiency
Memory IC Procurement Notes
Verify the specific suffix 'MGCJ' against official Samsung documentation to confirm the exact temperature grade and speed bin, as variations exist within the K4F6E3S4HM family. Ensure compatibility with the target system's PCB layout for the 200-ball FBGA package. Cross-reference electrical specifications with the latest datasheet to validate voltage levels and timing requirements before integration.
Memory IC Selection Notes
Select this component for designs requiring 16Gb capacity in a compact form factor. The x32 interface width suits applications needing wide data buses without complex interleaving. Consider the -25°C to +85°C operating range when designing for consumer electronics environments that may experience moderate thermal stress during sustained operation.
Memory IC Part Context
This part belongs to Samsung's LPDDR4 product line, designed for mobile applications where power efficiency and high bandwidth are critical. It serves as a standard memory solution for next-generation mobile platforms, supporting advanced features like auto-precharge and write leveling to maintain reliability in dense packaging configurations.
Memory IC Replacement Considerations
Micron MT53E512M32D1ZW-046 is listed as a potential substitute with similar specifications and TFBGA-200 packaging. Verify pinout compatibility and electrical parameters before substitution.
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