K6E0804C1E-JC15T00

Memory IC Overview

The K6E0804C1E-JC15T00 is a standard Static Random Access Memory (SRAM) integrated circuit manufactured by Samsung Semiconductor. It features a memory density of 32K x 4 bits, providing a total storage capacity of 128 kilobits. The device utilizes CMOS technology and operates with a maximum access time of 15 nanoseconds. It is housed in a Plastic Dual In-line Package (PDIP) with 24 terminals. The component supports TTL compatible I/O levels and is designed for commercial temperature range operations.

Memory IC Feature Summary

• High-speed data access capabilities enabled by 15ns maximum access time
• CMOS construction ensuring low power consumption during operation
• TTL compatible input/output interface for broad logic compatibility
• Standard SRAM architecture suitable for general-purpose buffering

Memory IC Applications

• General-purpose data buffering in embedded systems
• Cache memory implementation in microcontroller-based designs
• Temporary data storage in industrial control units
• Address latching in computer peripheral interfaces

Memory IC Procurement Notes

Verify the specific suffix JC15T00 against official Samsung documentation to confirm package type and tape-and-reel configuration. Ensure the voltage rating matches the system requirements, as variations exist within the K6E series. Confirm RoHS compliance status if required by local regulations, as older manufacturing runs may differ. Cross-reference the pinout diagram with the target PCB design to prevent mounting errors due to package variations.

Memory IC Selection Notes

Select this component when a 32K x 4 bit SRAM configuration is required rather than the more common 32K x 8 variant. The 15ns speed class is suitable for moderate-frequency digital circuits. Consider the 24-pin PDIP package for through-hole assembly processes or prototyping breadboards. Evaluate thermal dissipation needs based on the static current specifications found in the detailed datasheet, as CMOS leakage can vary with temperature extremes.

Memory IC Part Context

This part belongs to the Samsung K6E0804V1E series of high-speed CMOS static RAMs. These devices are designed for applications requiring fast read/write cycles and low power standby modes. The series typically includes variants with different access times and package options, catering to both commercial and industrial temperature ranges. The K6E series represents a standard solution for memory expansion in legacy and specialized digital electronics.

Memory IC Replacement Considerations

Direct replacements include other 32K x 4 SRAM chips with identical pinouts and 15ns access times. Verify voltage compatibility, as some equivalents may operate at 5V while others support lower voltages. Check for functional differences such as output enable controls or chip select configurations that might require schematic adjustments.