K6E0808C1E-JC15000

Memory IC Overview

The K6E0808C1E-JC15000 is a high-speed asynchronous Static Random Access Memory (SRAM) manufactured by Samsung Semiconductor, Inc. It provides a total memory capacity of 256Kbit, organized as 32K words by 8 bits. The device operates with a maximum access time of 15ns and requires a single 5V power supply. It is housed in a 28-pin Small Outline J-Lead (SOJ) package, designed for reliable performance in embedded systems requiring fast data storage and retrieval.

Memory IC Feature Summary

• High-speed asynchronous operation with 15ns access time
• Single 5V voltage supply requirement
• Organized as 32K x 8 bit SRAM architecture

Memory IC Applications

• Embedded systems requiring fast data storage
• Data retrieval applications
• General-purpose volatile memory circuits

Memory IC Procurement Notes

Verify the specific suffix JC15000 against official Samsung documentation to confirm pinout and electrical characteristics. Ensure compatibility with 5V logic levels and 28-SOJ footprint requirements during integration. Cross-reference datasheets for thermal and timing constraints.

Memory IC Selection Notes

Select this component when a 256Kbit non-volatile buffer is not required but fast random access is critical. The 15ns speed suits moderate-frequency embedded controllers. Verify that the 5V operating voltage aligns with the system's power rails and that the SOJ package fits the PCB layout constraints.

Memory IC Part Context

This part belongs to Samsung's legacy SRAM portfolio, specifically the K6E series. It serves as a standard static memory solution for industrial and consumer electronics where volatility is acceptable and speed is prioritized over density. The 28-pin form factor is common in older or specialized embedded designs.

Memory IC Replacement Considerations

Check for direct cross-references such as KM681002BJ-15T if available from Samsung. Verify pin compatibility and access times before substituting with other manufacturers' 32Kx8 SRAMs.