K6F1616U6A-EF55T

Memory IC Overview

The K6F1616U6A-EF55T is a 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM manufactured by Samsung Semiconductor. It operates with a supply voltage of 3V and features an asynchronous access time of 55ns. The device provides a total memory density of 16,777,216 bits organized as 1,048,576 words of 16-bit width. It is housed in a 48-pin VFBGA package with dimensions of 6 x 7 mm and a 0.75 mm pitch.

Memory IC Feature Summary

• Super low power consumption design for energy efficiency
• Low voltage operation compatible with 3V systems
• Full CMOS technology ensuring high performance

Memory IC Applications

• Portable electronic devices requiring low power memory
• Embedded systems utilizing 3V logic levels
• Industrial control applications needing reliable static RAM

Memory IC Procurement Notes

Verify the specific suffix 'EF55T' to confirm the tape and reel packaging variant against standard bulk options. Ensure compatibility with 3V operating conditions and 55ns timing requirements for your target circuit design before procurement.

Memory IC Selection Notes

Select this component when a 16M-bit capacity is required in a compact 48-pin footprint. It is suitable for designs prioritizing low power dissipation over ultra-high speed. Compare pinout and electrical characteristics with other K6F series variants if space or voltage constraints differ.

Memory IC Part Context

This part belongs to the Samsung K6F family of CMOS SRAMs. These components are designed for applications demanding high reliability and low power consumption. The K6F series typically offers various access speeds and package options to suit different system integration needs.

Memory IC Replacement Considerations

Check for direct cross-references within the K6F1616U6A family. Verify that substitute parts match the 48-pin VFBGA package and 3V voltage specifications.