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K6F2016U4D-FF70T00 is listed in the Memory IC range at ChipApex. The manufacturer field lists Samsung Semiconductor, Inc.. Its product description is SRAM ASYNC SLOW 2MB 128Kx16 3.3V. Review the specifications below when checking this part for your BOM.
The K6F2016U4D-FF70T00 is a standard static random-access memory (SRAM) integrated circuit manufactured by Samsung Semiconductor. It features a memory density of 2 megabits, organized as 128K words by 16 bits. The device operates asynchronously with a maximum access time of 70 nanoseconds. It utilizes full CMOS technology and supports low voltage operation. The component is housed in a 48-pin Thin Fine-Pitch Ball Grid Array (TFBGA) package with a 0.75 mm pitch, measuring 6 x 7 mm. It is designed for applications requiring super low power consumption.
Verify the specific suffix FF70T00 against official Samsung documentation to confirm package type, pin configuration, and environmental compliance status. Ensure compatibility with existing board layouts regarding the TFBGA footprint and thermal requirements before procurement.
Select this component when a 2Mb capacity with 16-bit width is required in a small form factor. Consider the 70ns access speed relative to system clock requirements. Evaluate the TFBGA package suitability for automated assembly processes and thermal management needs within the target enclosure.
This part belongs to the K6F family of Super Low Power and Low Voltage Full CMOS Static RAMs. The series typically offers various access speeds and package options to accommodate different design constraints while maintaining consistent low-power performance profiles across the product line.
Consult official Samsung substitution guides for verified equivalents. Cross-reference pinouts and electrical specifications carefully when considering alternative manufacturers or newer revisions within the same family.
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