Memory IC K6F2016U4D-FF70T00 product image

K6F2016U4D-FF70T00

$1.36
  • Description:SRAM ASYNC SLOW 2MB 128Kx16 3.3V
  • Series:-
  • Mfr:Samsung Semiconductor, Inc.
  • Package:Tape & Reel (TR)

SKU:5f6293083ae4 Category: Brand:

  
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K6F2016U4D-FF70T00 is listed in the Memory IC range at ChipApex. The manufacturer field lists Samsung Semiconductor, Inc.. Its product description is SRAM ASYNC SLOW 2MB 128Kx16 3.3V. Review the specifications below when checking this part for your BOM.

Memory IC specifications for K6F2016U4D-FF70T00

  • Description:SRAM ASYNC SLOW 2MB 128Kx16 3.3V
  • Series:-
  • Mfr:Samsung Semiconductor, Inc.
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:2Mbit
  • Memory Organization:128K x 16
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:70ns
  • Voltage - Supply:2.7V ~ 3.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:-
  • Supplier Device Package:48-FBGA (6x7)
  • Access Time:-
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for K6F2016U4D-FF70T00

K6F2016U4D-FF70T00

Memory IC Overview

The K6F2016U4D-FF70T00 is a standard static random-access memory (SRAM) integrated circuit manufactured by Samsung Semiconductor. It features a memory density of 2 megabits, organized as 128K words by 16 bits. The device operates asynchronously with a maximum access time of 70 nanoseconds. It utilizes full CMOS technology and supports low voltage operation. The component is housed in a 48-pin Thin Fine-Pitch Ball Grid Array (TFBGA) package with a 0.75 mm pitch, measuring 6 x 7 mm. It is designed for applications requiring super low power consumption.

Memory IC Feature Summary

  • Super low power consumption characteristics suitable for battery-operated devices
  • Full CMOS technology ensuring low voltage operation capabilities
  • Asynchronous read/write functionality for flexible system integration

Memory IC Applications

  • Portable consumer electronics requiring compact memory solutions
  • Industrial control systems utilizing low-power microcontrollers
  • Automotive electronic modules with space constraints

Memory IC Procurement Notes

Verify the specific suffix FF70T00 against official Samsung documentation to confirm package type, pin configuration, and environmental compliance status. Ensure compatibility with existing board layouts regarding the TFBGA footprint and thermal requirements before procurement.

Memory IC Selection Notes

Select this component when a 2Mb capacity with 16-bit width is required in a small form factor. Consider the 70ns access speed relative to system clock requirements. Evaluate the TFBGA package suitability for automated assembly processes and thermal management needs within the target enclosure.

Memory IC Part Context

This part belongs to the K6F family of Super Low Power and Low Voltage Full CMOS Static RAMs. The series typically offers various access speeds and package options to accommodate different design constraints while maintaining consistent low-power performance profiles across the product line.

Memory IC Replacement Considerations

Consult official Samsung substitution guides for verified equivalents. Cross-reference pinouts and electrical specifications carefully when considering alternative manufacturers or newer revisions within the same family.

K6F2016U4D-FF70T00K6F2016U4D-FF70T00
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