K6F2016U4E-EF70T

Memory IC Overview

The K6F2016U4E-EF70T is a standard SRAM with a memory density of 8388608 bits, organized as 524288 words by 16 bits. It features a maximum access time of 70 ns and operates in asynchronous mode. The device utilizes CMOS technology and is housed in a TSOP2 package with 44 pins. The maximum operating temperature is rated at 85 °C.

Memory IC Feature Summary

• Full CMOS static RAM architecture designed for low power consumption
• Asynchronous operation mode for flexible system integration
• Standard I/O configuration supporting common interface requirements

Memory IC Applications

• Embedded systems requiring non-volatile data retention without battery backup
• Cache memory applications in microcontroller-based designs
• Buffer storage in industrial control equipment

Memory IC Procurement Notes

Verify the specific suffix EF70T against official Samsung Semiconductor documentation to confirm pinout orientation and electrical characteristics. Ensure the procurement channel provides genuine components with traceable manufacturing history. Cross-reference the package dimensions and lead finish specifications with the latest datasheet revision to guarantee compatibility with existing PCB footprints and assembly processes.

Memory IC Selection Notes

Select this component when a 512K x 16 bit capacity is required with a 70 ns speed grade. The TSOP2-44 package suits space-constrained designs needing surface-mount assembly. Consider the 85 °C maximum operating temperature limit for environmental suitability. Evaluate power consumption metrics if battery life or thermal management is critical for the target application environment.

Memory IC Part Context

This part belongs to the Samsung K6F family of Super Low Power and Low Voltage Full CMOS Static RAMs. The family typically offers high-density storage solutions optimized for portable and battery-operated devices. The K6F2016U4E variant specifically targets applications demanding reliable data retention with minimal power draw during active and standby modes.

Memory IC Replacement Considerations

Check for direct substitutes within the K6F2016U4E series, such as different speed grades or package options. Verify functional equivalence with other manufacturers' 512K x 16 SRAMs only if pin-to-pin compatibility and electrical parameters match exactly.