K6F3216U6M-EF70T

Memory IC Overview

The K6F3216U6M-EF70T is a 512K x 16-bit asynchronous static random-access memory (SRAM) manufactured by Samsung Semiconductor. It operates at a maximum access time of 70 nanoseconds and supports a supply voltage range typical for 3.3V logic families. The device utilizes full CMOS technology to ensure low power consumption during active and standby modes. It is housed in a standard surface-mount package designed for high-density board layouts.

Memory IC Feature Summary

• Asynchronous read/write operation for flexible system integration
• Low power consumption architecture suitable for battery-operated devices
• High-speed data access with 70ns cycle time
• CMOS technology ensuring noise immunity and reliability

Memory IC Applications

• Portable consumer electronics requiring compact memory solutions
• Industrial control systems needing reliable data storage
• Automotive infotainment and instrument clusters
• Network communication equipment buffers

Memory IC Procurement Notes

Verify the complete part number including suffixes such as 'T' which may indicate tape-and-reel packaging or specific temperature grades. Confirm the manufacturer source is authorized to avoid counterfeit components. Check for RoHS compliance status if required by your manufacturing standards. Ensure the datasheet version matches the production batch for accurate electrical specifications.

Memory IC Selection Notes

Select this component when a non-volatile solution is not required but fast random access is critical. Compare pin compatibility with existing designs if replacing older SRAM variants. Consider the operating voltage requirements against your system's power rails. Evaluate the package dimensions against your PCB footprint constraints before finalizing the bill of materials.

Memory IC Part Context

This SRAM belongs to Samsung's legacy K6F series, designed for general-purpose memory applications. It complements Samsung's broader portfolio of DRAM and Flash memory products. The series is known for balancing performance with power efficiency in embedded systems. It serves as a cache or working memory in microcontroller-based architectures.

Memory IC Replacement Considerations

Direct substitutes include other 512Kx16 SRAMs from manufacturers like ISSI or Cypress with compatible pinouts and timing. Verify voltage levels and access times match the original design requirements. Ensure the replacement package type allows for direct soldering without PCB modification.