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K6F4016R4E-EF85T00 is listed in the Memory IC range at ChipApex. The manufacturer field lists Samsung Semiconductor, Inc.. Its product description is SRAM ASYNC SLOW 4M 256Kx16 1.8V. Review the specifications below when checking this part for your BOM.
Memory IC specifications for K6F4016R4E-EF85T00
- Description：SRAM ASYNC SLOW 4M 256Kx16 1.8V
- Series：-
- Mfr：Samsung Semiconductor, Inc.
- Package：Tape & Reel (TR)
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Asynchronous
- Memory Size：4Mbit
- Memory Organization：256K x 16
- Memory Interface：Parallel
- Clock Frequency：-
- Write Cycle Time - Word, Page：85ns
- Voltage - Supply：1.65V ~ 2.2V
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：-
- Supplier Device Package：48-TFBGA (6x7)
- Access Time：-
- Grade：-
- Qualification：-
Memory IC datasheet and documents for K6F4016R4E-EF85T00
Memory IC Overview
The K6F4016R4E-EF85T00 is a standard SRAM with a memory density of 4,194,304 bits. It features an organization of 256K words by 16 bits and operates in asynchronous mode. The component utilizes CMOS technology and supports a common I/O type. It is housed in a TBGA-48 package with dimensions of 6 x 7 mm and a 0.75 mm pitch. The maximum access time is 85 ns, and the operating temperature range extends from -40°C to 85°C.
Memory IC Feature Summary
- Super low power consumption characteristics for energy efficiency
- Low voltage operation capability within specified supply ranges
- Full CMOS static RAM architecture for reliable data retention
Memory IC Applications
- Portable electronic devices requiring low power storage
- Embedded systems utilizing parallel memory interfaces
- Industrial control applications operating in extended temperature ranges
Memory IC Procurement Notes
Verify the specific suffix EF85T00 against official Samsung documentation to confirm package type and temperature grade. Ensure compatibility with system voltage requirements of 1.65V to 2.2V. Confirm pinout alignment for the TBGA-48 footprint during PCB design validation.
Memory IC Selection Notes
Select this component when a 256Kx16 configuration is required with low power constraints. Consider the 85ns access speed for asynchronous interface needs. Evaluate the TBGA-48 package suitability for space-constrained designs requiring robust thermal performance across industrial temperatures.
Memory IC Part Context
This part belongs to Samsung's K6F series of Super Low Power and Low Voltage Full CMOS Static RAMs. The series offers various densities and speeds tailored for portable and embedded applications. The K6F4016 variant specifically provides 4Mb capacity optimized for battery-operated devices.
Memory IC Replacement Considerations
Check for direct cross-references within the K6F4016 family with different speed grades or suffixes. Verify if alternative manufacturers offer electrically equivalent 256Kx16 SRAMs in TBGA-48 packages.
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