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K6F4016U4E-EF70T is listed in the Memory IC range at ChipApex. The manufacturer field lists Samsung Semiconductor, Inc.. Its product description is SRAM ASYNC SLOW 4M 256Kx16 3V 48. Review the specifications below when checking this part for your BOM.
Memory IC specifications for K6F4016U4E-EF70T
- Description：SRAM ASYNC SLOW 4M 256Kx16 3V 48
- Series：-
- Mfr：Samsung Semiconductor, Inc.
- Package：Tape & Reel (TR)
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Asynchronous
- Memory Size：4Mbit
- Memory Organization：256K x 16
- Memory Interface：Parallel
- Clock Frequency：-
- Write Cycle Time - Word, Page：70ns
- Voltage - Supply：2.7V ~ 3.3V
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：-
- Supplier Device Package：48-TFBGA (6x7)
- Access Time：-
- Grade：-
- Qualification：-
Memory IC datasheet and documents for K6F4016U4E-EF70T
Memory IC Overview
The K6F4016U4E-EF70T is a 4Mbit (256K x 16) asynchronous static RAM manufactured by Samsung Semiconductor. It operates at a supply voltage of 3V and features a maximum access time of 70ns. The component utilizes a 48-pin TSOP-II package, designed for low power consumption applications within the standard industrial temperature range.
Memory IC Feature Summary
- Asynchronous memory interface for flexible system integration
- Low voltage operation with reduced power consumption
- Full CMOS technology for high reliability
Memory IC Applications
- Portable electronic devices requiring low power storage
- Industrial control systems
- Embedded memory solutions in consumer electronics
Memory IC Procurement Notes
Verify the specific suffix 'EF70T' to confirm the 70ns speed grade and tape-and-reel packaging configuration. Ensure compatibility with 3V logic levels and TSOP-II footprint dimensions during procurement planning.
Memory IC Selection Notes
Select this part for designs requiring 4Mbit capacity with 16-bit width. It is suitable where low power and 3V operation are critical constraints compared to higher voltage alternatives.
Memory IC Part Context
This component belongs to Samsung's K6F series of low-power SRAMs. It shares architectural similarities with other members like the K6F4016U4G, differing primarily in speed grades and packaging options within the same family lineage.
Memory IC Replacement Considerations
The K6F4016U4G-EF70 is a compatible alternative within the same series, offering similar electrical characteristics and pinout configurations for direct substitution in existing designs.
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