K6R1008C1D-TC10

Memory IC Overview

The K6R1008C1D-TC10 is a high-speed Static Random Access Memory (SRAM) manufactured by Samsung Semiconductor. It provides a total memory density of 1,048,576 bits, organized as 262,144 words by 4 bits. The device operates asynchronously and utilizes CMOS technology for low power consumption. It features a standard voltage operation and is housed in a 32-pin package.

Memory IC Feature Summary

• High-speed asynchronous data access capabilities
• CMOS technology for reduced power consumption
• Standard static RAM architecture

Memory IC Applications

• General-purpose data storage in embedded systems
• Cache memory applications
• Buffer memory in digital circuits

Memory IC Procurement Notes

Verify the exact suffix configuration against official Samsung documentation to ensure compatibility with specific voltage or temperature grades. Confirm pinout and package dimensions match system requirements. Source from authorized distributors to guarantee authenticity and traceability of the semiconductor component.

Memory IC Selection Notes

Select this component when a 1M-bit SRAM with 4-bit word width is required. Ensure the design supports asynchronous interface timing. Verify that the operating voltage and environmental temperature range align with the specific TC10 grade specifications provided in the datasheet.

Memory IC Part Context

This part belongs to the Samsung K6R series of high-speed CMOS SRAMs. The series typically includes variants with different bit widths and organization structures, such as 8-bit and 16-word configurations, sharing similar core technologies and packaging standards for system integration flexibility.

Memory IC Replacement Considerations

Check for direct equivalents within the K6R family, such as the K6R1004C1D or K6R1016C1D, ensuring pin compatibility and electrical parameter alignment before substitution.