K6R1008C1D-TC10T00

Memory IC Overview

The K6R1008C1D-TC10T00 is a high-speed Static Random Access Memory (SRAM) manufactured by Samsung Semiconductor. It provides a total memory capacity of 1 Megabit, organized as 128K words by 8 bits. The device operates asynchronously and utilizes CMOS technology. It is designed for parallel data interface applications requiring fast access times. The component supports standard voltage levels suitable for general-purpose digital logic systems.

Memory IC Feature Summary

• High-speed asynchronous operation for rapid data retrieval
• CMOS technology ensuring low power consumption during standby and active modes
• Parallel interface architecture supporting direct connection to microprocessors

Memory IC Applications

• Cache memory in embedded systems
• Buffer storage in industrial control units
• Data holding in telecommunications equipment

Memory IC Procurement Notes

Verify the exact suffix TC10T00 against the manufacturer's current datasheet to confirm package type and tape/reel specifications. Ensure compatibility with system voltage requirements before integration. Cross-reference part numbers with authorized distributors to avoid counterfeit components. Confirm lead times and availability directly with suppliers as inventory levels fluctuate.

Memory IC Selection Notes

Select this component when a 1Mbit SRAM solution with asynchronous access is required. Consider the 128Kx8 organization for word-aligned data processing tasks. Evaluate the physical package dimensions against PCB layout constraints. Compare performance metrics such as access time against alternative parts if higher speed is necessary for the specific application timeline.

Memory IC Part Context

This part belongs to the Samsung K6R series of static RAM devices. The series typically includes various density and organization options tailored for different memory management needs. The K6R1008C1D variant specifically addresses mid-range memory requirements in consumer and industrial electronics where non-volatile retention is not needed but speed is critical.

Memory IC Replacement Considerations

Check for direct pin-compatible substitutes within the same Samsung family or other manufacturers offering identical 128Kx8 asynchronous SRAM specifications. Verify that any replacement maintains the same voltage range and access time characteristics to ensure system stability without redesign.