K6R1008V1C-JC12000

Memory IC Overview

The K6R1008V1C-JC12000 is a 1Mbit (128K x 8) High-Speed CMOS Static RAM manufactured by Samsung Semiconductor. It operates at a supply voltage of 3.3V and supports parallel data interfaces for rapid access to stored information. The device is rated for an operating temperature range of -40°C to +85°C, ensuring reliability in various industrial environments. This asynchronous SRAM provides high-performance memory solutions suitable for applications requiring fast data retrieval and stable operation under standard industrial conditions.

Memory IC Feature Summary

• High-speed CMOS technology enables rapid access to stored data for efficient system performance.
• Asynchronous interface architecture supports flexible integration into parallel data storage systems.
• Robust design ensures stable operation within specified industrial temperature ranges.

Memory IC Applications

• Industrial control systems
• Data storage modules requiring fast access
• Embedded systems with parallel interface requirements

Memory IC Procurement Notes

Verify the complete part number including suffixes against official Samsung documentation to ensure correct voltage and temperature ratings. Confirm package type and pin configuration match your PCB layout requirements. Request manufacturer datasheets for detailed electrical characteristics and timing diagrams before finalizing procurement decisions.

Memory IC Selection Notes

Select this component when a 1Mbit capacity asynchronous SRAM with 3.3V operation is required. Ensure the application environment falls within the specified temperature range. Verify that the parallel interface matches the host controller's capabilities. Consider power consumption and access speed requirements relative to other available Samsung SRAM options.

Memory IC Part Context

This part belongs to Samsung's K6R series of high-speed static random-access memories. The series offers various densities and interface configurations for different embedded memory needs. The K6R1008V1C variant specifically targets applications needing reliable 1Mbit storage with standard 3.3V logic levels and parallel connectivity.

Memory IC Replacement Considerations

Check Samsung's official cross-reference lists for compatible upgrades or alternatives. Verify pin compatibility and electrical specifications if substituting with similar density parts from other manufacturers. Ensure any replacement maintains the same asynchronous interface and voltage requirements.