K6T1008V2E-TF70

Memory IC Overview

The K6T1008V2E-TF70 is a 1Mbit Asynchronous Static Random-Access Memory (SRAM) integrated circuit manufactured by Samsung Semiconductor, Inc. It features a memory organization of 128K words by 8 bits and utilizes a parallel interface for data transfer. The device operates at a low voltage of 3.3V and supports high-speed write cycles with a cycle time of 70ns. It is housed in a 32-pin Thin Shrink Small Outline Package (TSOP) and is classified as volatile memory technology.

Memory IC Feature Summary

• Asynchronous SRAM architecture for general-purpose data storage
• Parallel interface supporting standard digital logic connections
• Low voltage operation compatible with 3.3V systems
• High-speed write cycle performance

Memory IC Applications

• General-purpose volatile data storage in electronic circuits
• Buffer memory applications requiring fast access times
• Embedded systems utilizing asynchronous memory interfaces

Memory IC Procurement Notes

Verify the exact suffix designation, as the model may appear as K6T1008V2E-TF70 or K6T1008V2E-TF70T in documentation. Confirm package type is 32-TSOP. Check product status as some sources indicate this specific part number may be obsolete. Ensure compatibility with 3.3V logic levels before integration into designs.

Memory IC Selection Notes

Select this component when a 1Mbit asynchronous SRAM with a 32-pin TSOP footprint is required. It is suitable for applications needing 70ns write speeds and 3.3V operation. Consider alternative packages if space constraints differ from the TSOP form factor. Verify that the asynchronous interface aligns with the system controller's memory bus capabilities.

Memory IC Part Context

This part belongs to the Samsung K6T1008 series of asynchronous SRAMs. These devices are fabricated using advanced CMOS process technology. The series typically supports various operating temperature ranges, though specific grades vary by suffix. The K6T1008V2E-TF70 represents a specific configuration within this family focusing on 3.3V operation and standard speed grades.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing requires consulting official Samsung replacement guides or equivalent asynchronous SRAM datasheets with matching pinouts and electrical specifications.