K6T1008V2E-TF70T

Memory IC Overview

The K6T1008V2E-TF70T is a 1Mbit asynchronous static random-access memory (SRAM) integrated circuit manufactured by Samsung Semiconductor, Inc. It features a 128K x 8 bit organization and operates at a supply voltage of 3.3V. The device utilizes CMOS technology for low power consumption and is available in a Tape & Reel packaging format.

Memory IC Feature Summary

• Asynchronous parallel data access architecture
• Low power CMOS fabrication process
• 3.3V single supply voltage operation

Memory IC Applications

• Embedded systems requiring fast parallel memory access
• Data processing applications needing reliable storage
• General-purpose volatile memory solutions

Memory IC Procurement Notes

Verify the exact suffix TF70T to confirm the specific tape and reel packaging configuration. Ensure compatibility with 3.3V logic levels in the target design. Cross-reference the manufacturer part number against official Samsung documentation to avoid counterfeit components or incorrect variant substitutions.

Memory IC Selection Notes

Select this component when a 1Mbit capacity with 8-bit word width is required. It is suitable for designs prioritizing low power consumption through advanced CMOS processes. Consider the asynchronous interface requirements and 3.3V operating voltage constraints before integration into the system architecture.

Memory IC Part Context

This SRAM belongs to the K6T1008V2E family, which includes variants like the K6T1008U2E. These devices are designed as low-power, low-voltage static RAMs fabricated using Samsung's advanced CMOS technology, offering a balance of performance and energy efficiency for embedded memory needs.

Memory IC Replacement Considerations

Check for other members of the K6T1008V2E family, such as K6T1008U2E, for potential pin-compatible alternatives with different speed grades or package options.