K6X0808C1D-BF55

Memory IC Overview

The K6X0808C1D-BF55 is a standard static random-access memory (SRAM) integrated circuit manufactured by Samsung Semiconductor. It features a memory density of 256K bits, organized as 32K words by 8 bits. The device utilizes CMOS technology and operates asynchronously with a maximum access time of 55 nanoseconds. It is housed in a 28-pin Thin Shrink Small Outline Package (TSOP), specifically TSOP1-28, with physical dimensions of approximately 8 mm by 13.40 mm. The component supports single 5V operation and is designed for general-purpose data storage applications requiring fast read/write capabilities.

Memory IC Feature Summary

• Asynchronous operation mode for flexible system integration
• Low power consumption utilizing advanced CMOS process technology
• Standard SRAM architecture providing reliable data retention

Memory IC Applications

• General-purpose data buffering in embedded systems
• Cache memory implementation in microcontroller-based designs
• Data storage in industrial control equipment

Memory IC Procurement Notes

Verify the exact package marking and revision level against the official Samsung datasheet to ensure compatibility with your design requirements. Confirm that the 55ns access time meets your system's timing constraints. Ensure the 28-pin TSOP footprint matches your PCB layout specifications. Check for any specific environmental or operating temperature range certifications required for your application environment before finalizing procurement.

Memory IC Selection Notes

Select this component when a non-volatile-like temporary storage solution is needed within a volatile memory context but without the complexity of DRAM refresh cycles. The 32Kx8 configuration suits applications requiring moderate data buffer sizes. The asynchronous interface simplifies timing design compared to synchronous alternatives. Consider the 55ns speed as adequate for medium-speed peripheral interfaces rather than high-performance processor caches.

Memory IC Part Context

This part belongs to the K6X0808C1D family of low-power CMOS static RAMs from Samsung. The family typically includes variants with different access speeds and package options. The K6X0808C1D-BF55 specifically denotes the 55ns speed grade in the 28-pin TSOP package. These components are part of Samsung's broader portfolio of memory solutions designed for cost-effective and space-constrained electronic devices.

Memory IC Replacement Considerations

Direct substitutes may include other 32Kx8 asynchronous SRAMs in 28-pin TSOP packages from manufacturers like ISSI or Winbond, provided pinouts and electrical characteristics match. Verify logic voltage levels and access times carefully. Cross-referencing with Samsung's own family members, such as faster speed grades in the same series, is also a valid consideration if performance allows.