K6X0808C1D-BF70

Memory IC Overview

The K6X0808C1D-BF70 is a standard static random-access memory (SRAM) integrated circuit manufactured by Samsung Semiconductor. It features an organization of 128K words by 8 bits, providing a total memory density of 1 Megabit. The device operates with a maximum access time of 70 nanoseconds and utilizes CMOS technology for low power consumption. It is housed in a 32-pin Plastic Dual Small Outline (PDSO32) package, also referred to as SOP-32. The component supports asynchronous operation modes and is designed for general-purpose data storage applications requiring fast read/write capabilities within standard voltage ranges typical for this generation of SRAM devices.

Memory IC Feature Summary

• Asynchronous operation mode for flexible system integration
• CMOS technology ensuring low power consumption
• Standard SRAM architecture for general-purpose data storage

Memory IC Applications

• General-purpose data buffering in embedded systems
• Cache memory implementation in microcontroller-based designs
• Data storage in industrial control equipment

Memory IC Procurement Notes

Verify the exact suffix designation against official Samsung documentation to confirm pinout compatibility and electrical specifications. Ensure the procurement source provides genuine components with traceable manufacturing dates. Cross-reference the package type PDSO32 with your PCB footprint requirements. Confirm that the 70ns access time meets your system timing constraints before finalizing orders.

Memory IC Selection Notes

Select this component when a 128Kx8 configuration is required with 70ns speed performance. It is suitable for designs needing a standard SRAM interface without complex controller overhead. Consider the 32-pin SOP package dimensions for board space limitations. Compare against faster variants if higher throughput is needed, or lower-speed parts if cost reduction is prioritized over performance.

Memory IC Part Context

This part belongs to the Samsung K6X series of standard SRAMs, which are widely used in legacy and current embedded applications. The series offers various speed grades and package options to suit different design needs. The K6X0808C1D variant specifically targets applications requiring reliable, non-volatile-like retention during power cycles while maintaining fast random access speeds typical of SRAM technology.

Memory IC Replacement Considerations

Check for direct pin-to-pin replacements within the same Samsung family with compatible speed grades. Verify that any substitute maintains the 128Kx8 organization and 32-pin SOP package. Ensure voltage levels and access times meet or exceed original specifications.