K6X0808C1D-BF70T

Memory IC Overview

The K6X0808C1D-BF70T is a standard SRAM component manufactured by Samsung Semiconductor, Inc. It features a memory density of 256Kbit (32Kx8 configuration) and utilizes CMOS technology. The device operates in asynchronous mode with a maximum access time of 70 ns. It is housed in a 28-pin TSOP package.

Memory IC Feature Summary

• Fabricated using advanced CMOS process technology for low power consumption
• Supports various operating temperature ranges
• Provides compact high-performance memory solution

Memory IC Applications

• Low-power applications requiring compact memory solutions
• Asynchronous memory systems
• General purpose static RAM storage

Memory IC Procurement Notes

Verify the specific suffix 'BF70T' against official Samsung documentation to confirm package type and temperature range specifications. Ensure compatibility with system voltage requirements and interface standards before integration. Cross-reference part numbers with authorized distributors to avoid counterfeit components.

Memory IC Selection Notes

Select this component for designs requiring 32Kx8 bit asynchronous SRAM with 70 ns access speed. Consider the 28-pin TSOP package constraints for PCB layout. Evaluate power consumption characteristics relative to system battery or thermal limits. Confirm operating temperature range matches environmental conditions.

Memory IC Part Context

This part belongs to the K6X0808C1D family of low power CMOS static RAMs from Samsung. The family shares common fabrication technology and functional architecture, differing primarily in access speeds and packaging options. It serves as a direct replacement for similar legacy SRAM devices in embedded systems.

Memory IC Replacement Considerations

Compatible substitutes include K6X0808C1D-DF70 and K6X0808C1D-GF70 within the same Samsung family. Verify pinout and electrical parameters match before substitution.