Memory IC K6X0808C1D-GF55000 product image

K6X0808C1D-GF55000

$3.19
  • Description:SRAM ASYNC SLOW 256K 32Kx8 28-S
  • Series:-
  • Mfr:Samsung Semiconductor, Inc.
  • Package:Tube

SKU:81a8db4f1fec Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

K6X0808C1D-GF55000 is listed in the Memory IC range at ChipApex. The manufacturer field lists Samsung Semiconductor, Inc.. Its product description is SRAM ASYNC SLOW 256K 32Kx8 28-S. Review the specifications below when checking this part for your BOM.

Memory IC specifications for K6X0808C1D-GF55000

  • Description:SRAM ASYNC SLOW 256K 32Kx8 28-S
  • Series:-
  • Mfr:Samsung Semiconductor, Inc.
  • Package:Tube
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:256Kbit
  • Memory Organization:32K x 8
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:55ns
  • Voltage - Supply:4.5V ~ 5.5V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:-
  • Supplier Device Package:28-SOP
  • Access Time:-
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for K6X0808C1D-GF55000

K6X0808C1D-GF55000

Memory IC Overview

The K6X0808C1D-GF55000 is a standard asynchronous static random-access memory (SRAM) manufactured by Samsung Semiconductor. It features a memory density of 256K bits, organized as 32K words by 8 bits. The device utilizes CMOS technology and operates with an access time of 55 ns. It is housed in a 28-pin Thin Shrink Small Outline Package (TSOP). The component supports asynchronous operation modes and is designed for general-purpose volatile data storage applications within electronic systems.

Memory IC Feature Summary

  • Asynchronous SRAM architecture for flexible system integration
  • CMOS fabrication process for low power consumption
  • Standard parallel interface configuration

Memory IC Applications

  • General-purpose data buffering in embedded systems
  • Cache memory implementation in microcontroller units
  • Temporary data storage in industrial control equipment

Memory IC Procurement Notes

Verify the exact suffix GF55000 against the manufacturer's current datasheet to confirm pinout compatibility and electrical specifications. Ensure the package type matches the target PCB footprint. Check for obsolescence status as this specific part number may be discontinued or superseded by newer revisions within the K6X family. Confirm temperature range requirements align with the specified operating conditions.

Memory IC Selection Notes

Select this component when a 32Kx8 asynchronous SRAM with 55ns speed is required. Consider the TSOP-28 package constraints for board layout. Evaluate power consumption characteristics against system battery life requirements. Compare with alternative Samsung K6T or K6X series parts if different speeds or densities are needed. Verify voltage levels match the system logic standards.

Memory IC Part Context

This part belongs to the Samsung K6X0808C1D family of low-power CMOS static RAMs. The family offers various operating temperature ranges and package options. The K6X designation typically indicates specific performance characteristics within Samsung's SRAM portfolio. Related parts include variants with different access times or package styles, such as the K6T0808C1D series.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Users should consult Samsung Semiconductor directly for cross-reference information or updated product lifecycle status.

K6X0808C1D-GF55000K6X0808C1D-GF55000
$3.19
Buy Now