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K6X4008C1F-MF55 is listed in the Memory IC range at ChipApex. The manufacturer field lists Samsung Semiconductor, Inc.. Its product description is SRAM ASYNC SLOW 4MB 512Kx8 5V 32. Review the specifications below when checking this part for your BOM.
Memory IC specifications for K6X4008C1F-MF55
- Description：SRAM ASYNC SLOW 4MB 512Kx8 5V 32
- Series：-
- Mfr：Samsung Semiconductor, Inc.
- Package：Tray
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Asynchronous
- Memory Size：4Mbit
- Memory Organization：512K x 8
- Memory Interface：Parallel
- Clock Frequency：-
- Write Cycle Time - Word, Page：55ns
- Voltage - Supply：4.5V ~ 5.5V
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：-
- Supplier Device Package：32-TSOP REVERSE
- Access Time：-
- Grade：-
- Qualification：-
Memory IC datasheet and documents for K6X4008C1F-MF55
Memory IC Overview
The K6X4008C1F-MF55 is a 4Mbit (512K x 8) asynchronous static random-access memory (SRAM) manufactured by Samsung Semiconductor. It operates on a single 5V power supply and features a parallel interface with common I/O lines. The component provides a maximum access time of 55ns and is housed in a 32-pin Thin Shrink Small Outline Package (TSOP). Designed for low-power applications, it supports an operating temperature range from -40°C to +85°C.
Memory IC Feature Summary
- Asynchronous operation with common bidirectional data I/O
- Low standby current consumption for power efficiency
- Single 5V voltage supply operation
- Industrial temperature range support
Memory IC Applications
- Portable consumer electronics requiring low power
- Embedded systems with limited power budgets
- Industrial control equipment
- Automotive electronic modules
Memory IC Procurement Notes
Verify the exact suffix MF55 against official Samsung documentation to confirm package dimensions and pinout compatibility. Confirm RoHS compliance status as historical records may vary. Ensure the source document explicitly lists this part number to avoid confusion with similar K6X series variants that may differ in speed or organization.
Memory IC Selection Notes
Select this component when a 512Kx8 organization is required with 55ns access speed. It is suitable for designs needing low standby power and industrial temperature tolerance. Compare against faster alternatives if system timing constraints exceed 55ns. Verify voltage requirements match the 5V logic levels of the target application circuit.
Memory IC Part Context
This device belongs to the Samsung K6X series of CMOS SRAMs, which are designed for low-voltage and low-power applications. The series typically includes various densities and speeds, utilizing standard asynchronous interfaces. The K6X4008C1F-MF55 specifically addresses the 4Mbit capacity segment within this family.
Memory IC Replacement Considerations
Check for direct cross-references in Samsung's obsolescence notices. Similar parts in the K6X series may offer different access times or pin configurations. Ensure any substitute maintains the 512Kx8 density and 32-pin TSOP form factor.
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