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The KA2901DTF is a dual NPN bipolar junction transistor manufactured by onsemi. It is housed in an SOT-363 surface-mount package, designed for compact circuit layouts. The device features a collector-emitter voltage rating of 50V and a collector current capacity of 100mA per transistor. It operates with a DC current gain (hFE) ranging from 100 to 300 at a collector current of 10mA. The component supports a maximum power dissipation of 225mW and functions within a junction temperature range of -55°C to +150°C.
Verify the exact part marking and packaging type against official onsemi documentation before procurement. Ensure the supplier provides traceability to the original manufacturer. Confirm that the received components match the specified SOT-363 package dimensions and pinout configuration to prevent integration errors during assembly.
Select this component when space constraints require dual transistors in a minimal footprint. Consider its 50V voltage rating and 100mA current limit for appropriate load requirements. Evaluate the thermal performance characteristics relative to the expected power dissipation in the target application environment.
This component belongs to onsemi's portfolio of small-signal bipolar junction transistors. It serves as a discrete solution for integrating two NPN transistors without requiring separate packages. The design supports modern electronics manufacturing techniques through its surface-mount technology compatibility.
Consult official cross-reference lists for verified substitutes. Ensure any alternative maintains identical pinout, voltage ratings, and current capabilities to guarantee functional equivalence in existing designs.