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The KBP103G C2 is a single-phase bridge rectifier manufactured by Taiwan Semiconductor. It features a glass-passivated silicon die within a molded plastic KBP-4 package designed for through-hole mounting. The device provides a maximum average forward rectified current of 1 A and supports a maximum repetitive peak reverse voltage of 200 V. Key electrical specifications include a maximum instantaneous forward voltage of 1.0 V at 1 A, a peak forward surge current rating of 30 A, and a maximum DC reverse current of 500 μA at 125°C. The component operates reliably across an extended junction temperature range from -55°C to +150°C.
Verify that the ordering suffix matches the required packing code and material specification. Confirm the presence of the 'G' designation to ensure compliance with halogen-free manufacturing standards. Cross-reference the manufacturer part number with official distributor catalogs to validate authenticity and traceability before finalizing procurement orders.
Select this component when a 1 A continuous current rating and 200 V blocking voltage are required for through-hole applications. Ensure the design accommodates the specified thermal resistance values and allows for adequate derating based on ambient operating temperatures. Verify that the physical dimensions of the KBP-4 package fit the target PCB layout constraints.
This component belongs to the KBP10xG series of glass-passivated bridge rectifiers produced by Taiwan Semiconductor. The series covers voltage ratings from 50 V to 1000 V while maintaining a consistent 1 A current capacity. The KBP103G specifically addresses applications requiring 200 V reverse voltage capability within this standardized product family.
Compatible substitutes within the same series include KBP101G, KBP102G, KBP104G, KBP105G, KBP106G, and KBP107G. These parts share identical mechanical and current characteristics but differ in their maximum repetitive peak reverse voltage ratings.