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The GeneSiC Semiconductor KBPC25010T is a single-phase silicon bridge rectifier rated for a maximum average forward rectified current of 25 A. It features a repetitive peak reverse voltage (VRRM) of 1000 V, with corresponding RMS and DC blocking voltages of 700 V and 1000 V respectively. The device supports a peak forward surge current of 350 A under half-sine wave conditions. Electrical characteristics include a maximum instantaneous forward voltage of 1.1 V per leg and a typical junction capacitance of 300 pF. Thermal resistance from junction to case is 1.9 °C/W. The component operates within a temperature range of -55 °C to +150 °C.
Verify the specific datasheet version and manufacturer documentation before procurement. Confirm that the package type matches the required mechanical constraints, as variations exist between T and W suffixes. Ensure thermal design accounts for the specified thermal resistance values under actual mounting conditions. Check for any discontinuation notices or lifecycle status updates directly from the supplier.
Select this component when a 25 A continuous current rating and 1000 V reverse voltage are required. Consider the 1.9 °C/W thermal resistance for heatsink calculations. Derate the forward current by 20% if the application involves capacitive loads. Ensure the operating environment stays within the -55 °C to +150 °C junction temperature range.
The KBPC25010T belongs to the KBPC2506T/W through KBPC2510T/W series of single-phase bridge rectifiers. This family shares identical electrical ratings for current and thermal performance, differing primarily in their voltage ratings which range from 600 V to 1000 V. All variants utilize the same KBPC-T or KBPC-W package style.
Direct substitutes must match the 25 A current, 1000 V voltage, and KBPC package dimensions. Verify pinout compatibility and thermal resistance specifications. Cross-reference with other manufacturers offering equivalent single-phase bridge rectifiers in metal-encapsulated packages.