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The GeneSiC Semiconductor KBPC2502T is a single-phase silicon bridge rectifier designed for high-efficiency power conversion. It features a maximum average forward rectified current (IO) of 25 A and a repetitive peak reverse voltage (VRRM) of 200 V. The device supports a peak forward surge current (IFSM) of 350 A under standard half-sine wave conditions. Electrical characteristics are specified at a case temperature (Tc) of 25 °C, with a typical junction capacitance (Cj) of 300 pF measured at 1 MHz. Thermal performance includes a typical thermal resistance (RΘJC) of 1.9 °C/W when mounted on a 300 mm x 300 mm x 1.6 mm copper plate heatsink.
Verify the specific voltage rating suffix against the required circuit design, as the KBPC2500 series spans multiple voltage options. Confirm the package variant matches the PCB footprint requirements, distinguishing between the T and W package types if applicable. Ensure the supplier provides original manufacturer documentation to validate the component's authenticity and traceability before integration into production.
Select this component for applications requiring a 25 A continuous current rating with a 200 V blocking capability. Consider the 1.9 °C/W thermal resistance when designing the heatsinking strategy, ensuring the case temperature remains within the -55 °C to 150 °C operating range. Derate the forward current by 20% if the load is capacitive to maintain reliable operation and prevent excessive surge currents during startup.
The KBPC2502T belongs to the KBPC2500 series of single-phase bridge rectifiers from GeneSiC Semiconductor. This series offers various voltage ratings ranging from 50 V to 400 V while maintaining a consistent 25 A current capacity. The components share identical physical dimensions and thermal characteristics, differing primarily in their peak reverse voltage specifications to suit different system voltage levels.
Compatible substitutes include other 25 A, 200 V single-phase bridge rectifiers in the KBPC-T or KBPC-W packages. Verify that replacement parts match the 1.1 V maximum instantaneous forward voltage and 300 pF junction capacitance to ensure equivalent electrical performance and thermal behavior in the existing circuit design.