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The KBPC2506T is a single-phase silicon bridge rectifier manufactured by GeneSiC Semiconductor. It features a maximum average forward rectified current (IO) of 25 A at a case temperature of 55 °C and a peak forward surge current (IFSM) of 350 A under half-sine-wave conditions. The device supports a repetitive peak reverse voltage (VRRM) of 600 V, with an RMS reverse voltage of 420 V and a DC blocking voltage of 600 V. Electrical characteristics include a maximum instantaneous forward voltage per leg of 1.1 V and a typical junction capacitance of 300 pF. Thermal resistance from junction to case is 1.9 °C/W. The component operates within a temperature range of -55 °C to +150 °C.
Verify the specific manufacturer designation on the datasheet, as GeneSiC Semiconductor has undergone corporate restructuring involving Navitas Semiconductor. Confirm RoHS compliance status through official documentation before procurement. Ensure the ordering suffix 'T' corresponds to the correct tape-and-reel or bulk packaging configuration required for your assembly process.
Select this component when a 25 A continuous current rating and 600 V reverse voltage are required. The low thermal resistance of 1.9 °C/W facilitates efficient heat dissipation. Consider derating the current by 20% if the application involves capacitive loads rather than resistive or inductive ones.
This part belongs to the KBPC2506T/W series, which includes variants ranging from 600 V to 1000 V reverse voltage ratings. The 'T' suffix typically denotes the specific package variant (KBPC-T) compared to the 'W' variant. This series is designed for high-current applications requiring robust mechanical mounting options.
Direct replacements must match the 25 A current rating, 600 V reverse voltage, and KBPC-T package dimensions. Verify that substitute components maintain the same 1.9 °C/W thermal resistance and 1.1 V forward voltage drop to ensure circuit compatibility.