SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The GeneSiC Semiconductor KBPC3502W is a single-phase silicon bridge rectifier designed for high-efficiency power conversion. It features a maximum average forward rectified current (IO) of 35 A and a repetitive peak reverse voltage (VRRM) of 200 V. The device supports a peak forward surge current (IFSM) of 400 A under standard half-sine wave conditions. Electrical characteristics include a maximum instantaneous forward voltage (VF) of 1.1 V per leg at Tc = 25 °C and a typical junction capacitance (Cj) of 300 pF. Thermal performance is defined by a typical thermal resistance (RΘJC) of 1.4 °C/W when mounted on a copper heatsink. The component operates within a junction temperature range of -55 °C to +150 °C.
Verify the manufacturer designation carefully, as GeneSiC Semiconductor has undergone corporate restructuring and is now part of Navitas Semiconductor. Ensure the datasheet source matches the specific revision required for your design. Confirm package compatibility with existing PCB footprints before ordering.
Select this component when a 200 V blocking voltage and 35 A continuous current rating are required. Consider the 1.4 °C/W thermal resistance for heatsink calculations. Derate the forward current by 20% if the load is capacitive. Ensure the operating environment stays within the specified -55 °C to +150 °C junction temperature limits.
This part belongs to the KBPC35005T/W through KBPC3504T/W series, which covers voltage ratings from 50 V to 400 V. The 'W' suffix indicates the use of the KBPC-W package variant. All models in this series share identical current and thermal specifications, differing only in their reverse voltage capabilities.
Direct substitutes include the KBPC3502T (using the KBPC-T package) or equivalent 35 A / 200 V bridge rectifiers from other manufacturers such as Vishay (VS-GBPC3502W) or onsemi (GBPC3502W), provided the package dimensions and terminal configurations are compatible.