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The GeneSiC Semiconductor KBPC3506T is a single-phase silicon bridge rectifier designed for high-efficiency power conversion. It features a maximum average forward rectified current of 35 A and a repetitive peak reverse voltage of 600 V. The device utilizes the KBPC-T package, which incorporates a metal heatsink integrated into the encapsulation to facilitate thermal management. Key electrical characteristics include a typical junction capacitance of 300 pF and a typical thermal resistance of 1.4 °C/W when mounted on a specified copper plate. The unit supports an operating temperature range from -55 °C to +150 °C.
Verify the specific manufacturer designation, as some listings associate this part number with Navitas or other entities. Confirm the exact package variant (KBPC-T versus KBPC-W) matches the required mechanical footprint. Ensure the datasheet version aligns with the intended application parameters before finalizing procurement orders.
Select this component for applications requiring 35 A continuous current handling at 600 V blocking voltage. Consider the thermal resistance value when designing heat sinking solutions. Verify that the load conditions match the half-sine wave specifications provided in the ratings table for accurate performance prediction.
This component belongs to the KBPC35 series of single-phase bridge rectifiers, which includes variants ranging from 600 V to 1000 V reverse voltage. The series shares common mechanical dimensions and mounting styles, differing primarily in voltage ratings and specific thermal characteristics defined by the manufacturer's datasheets.
Cross-reference with GBPC3506 or VS-GBPC3506A for similar electrical ratings. Verify physical compatibility, as the GBPC package differs from the KBPC-T form factor. Ensure replacement parts meet the same 35 A current and 600 V voltage requirements.