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The GeneSiC Semiconductor KBPC3510T is a single-phase silicon bridge rectifier utilizing the KBPC-T package. It provides a maximum average forward rectified current of 35 A at a case temperature of 55 °C and supports a peak forward surge current of 400 A under half-sine-wave conditions. The device features a repetitive peak reverse voltage of 1000 V, with a typical junction capacitance of 300 pF and a maximum instantaneous forward voltage of 1.1 V per leg. Thermal resistance from junction to case is rated at 1.4 °C/W. The component operates within a temperature range of -55 °C to +150 °C.
Verify the specific suffix 'T' against official documentation to confirm the KBPC-T mechanical variant. Ensure the selected manufacturer matches the required quality standards. Confirm that the 1000 V rating aligns with the system's peak reverse voltage requirements. Validate thermal dissipation capabilities based on the specified heatsink dimensions.
Select this component when a 35 A continuous current capacity and 1000 V blocking voltage are required in a through-hole configuration. Consider the 1.4 °C/W thermal resistance for heatsink design. Derate the forward current by 20% if the application involves capacitive loads. Ensure the operating environment stays within the -55 °C to +150 °C junction temperature limits.
This part belongs to the KBPC3506T/W through KBPC3510T/W series, which shares identical electrical ratings except for the reverse voltage. The 'T' designation indicates the use of the KBPC-T package style. This series is designed for high-power applications requiring reliable single-phase rectification with robust surge handling capabilities.
Cross-reference with other manufacturers offering the KBPC3510 or KBPC3510T part numbers. Verify that substitute components match the 35 A current rating, 1000 V reverse voltage, and KBPC-T package dimensions.