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The GeneSiC Semiconductor KBPC3510W is a single-phase silicon bridge rectifier designed for high-power applications. It features a maximum average forward rectified current of 35 A at a case temperature of 55 °C and supports a peak forward surge current of 400 A under half-sine-wave conditions. The device offers a repetitive peak reverse voltage of 1000 V with a typical junction capacitance of 300 pF. Operating within a wide thermal range from -55 °C to +150 °C, it utilizes a metal encapsulated case with a typical thermal resistance of 1.4 °C/W.
Verify the specific package variant (KBPC-T or KBPC-W) required for your design, as the datasheet distinguishes between them despite shared electrical ratings. Confirm that the application load is resistive or inductive; capacitive loads require a 20% current derating to ensure reliable operation within the specified thermal limits.
Select this component when a 1000 V blocking capability and 35 A continuous current are necessary. Ensure the PCB or heatsink can maintain the case temperature at or below 55 °C to achieve the rated current. Consider the 1.4 °C/W thermal resistance for calculating junction temperatures under full load conditions.
This part belongs to the KBPC3506T/W through KBPC3510T/W series, which shares identical physical dimensions and thermal characteristics. The 'W' suffix typically denotes a specific terminal configuration or packaging variation within the KBPC-W package family, distinct from the standard KBPC-T package.
Direct substitutes include other manufacturers' 35 A, 1000 V bridge rectifiers in the KBPC form factor, such as the GBPC3510W. Verify that replacement parts match the 1.4 °C/W thermal resistance and 400 A surge current specifications to maintain circuit integrity.