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The GeneSiC KBPM210G is a silicon bridge rectifier in the KBPM package, rated for a continuous forward current of 2 A and a repetitive peak reverse voltage of 800 V. It supports a surge non-repetitive forward current of 65 A. The device operates within a junction temperature range of -55 °C to 150 °C and features a maximum thermal resistance of 14.0 °C/W. Electrical characteristics include a forward voltage of 5 V at 2 A and a reverse leakage current of 500 μA at 125 °C.
Verify the specific part number suffix against the manufacturer's official documentation to confirm voltage ratings and electrical parameters. Ensure compatibility with PCB footprint requirements and thermal management constraints before procurement. Confirm that the component meets all necessary safety certifications for the intended application environment.
Select this component based on the required reverse voltage rating of 800 V and the 2 A continuous current capacity. Consider the thermal resistance of 14.0 °C/W for heat dissipation planning. Verify that the operating temperature range of -55 °C to 150 °C aligns with the system's environmental conditions.
This component belongs to the KBPM series of silicon bridge rectifiers from GeneSiC Semiconductor. The series includes variants with different voltage ratings, such as the KBPM206G and KBPM208G, sharing similar physical dimensions and packaging characteristics. The KBPM package is designed for reliable surface or through-hole mounting in compact electronic designs.
Compatible replacements must match the 800 V reverse voltage, 2 A forward current, and KBPM package outline. Verify equivalent thermal resistance and forward voltage characteristics to ensure circuit performance remains unchanged during substitution.