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Product Detailed Parameters
- Description：BRIDGE RECT 1PHASE 100V 10A KBU
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tray
- Diode Type：Single Phase
- Technology：Standard
- Voltage - Peak Reverse (Max)：100 V
- Current - Average Rectified (Io)：10:00 AM
- Voltage - Forward (Vf) (Max) @ If：1.1 V @ 10 A
- Current - Reverse Leakage @ Vr：5 µA @ 100 V
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：4-SIP, KBU
- Supplier Device Package：KBU
- Grade：-
- Qualification：-
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Overview
The KBU1002G T0G is a single-phase bridge rectifier from the KBU100 series by Taiwan Semiconductor. It features a 10 A average forward current and a 100 V repetitive peak reverse voltage. The device utilizes glass passivated chip junctions within a KBU through-hole package, supporting a maximum junction temperature of 150 °C. Electrical characteristics include a typical forward voltage of 1.0 V at 5 A and a maximum reverse current of 5 µA at 25 °C. Thermal resistance values are specified as 25 °C/W (junction-to-ambient) and 2.2 °C/W (junction-to-case).
Feature Summary
- Glass passivated chip junction for enhanced reliability.
- High case dielectric strength suitable for PCB mounting.
- Compliant with UL recognition standards.
Applications
- Switching mode power supplies (SMPS)
- Power adapters
- Lighting applications
Procurement Notes
Verify the specific ordering code against manufacturer documentation to ensure correct voltage rating and packaging configuration. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer prior to procurement. Ensure storage conditions align with the specified temperature range to maintain component integrity.
Selection Notes
Select this component based on the required 100 V reverse voltage and 10 A current capacity. Evaluate thermal management requirements using the provided junction-to-ambient resistance data. Ensure the KBU package dimensions fit the target printed circuit board layout and verify that the operating temperature range meets the application's environmental constraints.
Part Context
This part belongs to the KBU100 series, which covers voltage ratings from 50 V to 1000 V. The series shares common mechanical and electrical characteristics, differing primarily in the repetitive peak reverse voltage specification. The KBU1002G specifically addresses low-voltage, high-current rectification needs within this standardized family.
Replacement Considerations
Direct substitutes must match the 10 A current rating, 100 V reverse voltage, and KBU package form factor. Verify equivalent thermal resistance and forward voltage characteristics to ensure circuit performance compatibility without redesign.
FAQ
What is the maximum non-repetitive surge current for the KBU1002G?
The maximum non-repetitive peak forward surge current (IFSM) is 200 A for an 8.3 ms single half sine-wave superimposed on rated load.
What is the typical junction capacitance value?
The typical junction capacitance per diode is 400 pF, measured at 1 MHz with a reverse voltage of 4.0 V.
Is the KBU1002G suitable for high-temperature environments?
Yes, the device supports a maximum junction temperature (TJ MAX) of 150 °C and a storage temperature range of -55 °C to +150 °C.
