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Product Detailed Parameters
- Description：BRIDGE RECT 1PHASE 200V 10A KBU
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tray
- Diode Type：Single Phase
- Technology：Standard
- Voltage - Peak Reverse (Max)：200 V
- Current - Average Rectified (Io)：10:00 AM
- Voltage - Forward (Vf) (Max) @ If：1.1 V @ 10 A
- Current - Reverse Leakage @ Vr：5 µA @ 200 V
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：4-SIP, KBU
- Supplier Device Package：KBU
- Grade：-
- Qualification：-
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Overview
The KBU1003G T0 is a single-phase silicon bridge rectifier from the KBU100 series by Taiwan Semiconductor. It features a 10 A average forward current (IF) and a 200 V repetitive peak reverse voltage (VRRM). The device utilizes a glass-passivated chip junction within a KBU through-hole package, supporting a maximum junction temperature of +150 °C. Electrical characteristics include a typical forward voltage of 1.1 V at 10 A and a maximum reverse current of 5 µA at 25 °C. It withstands a 200 A non-repetitive surge current and exhibits a thermal resistance of 25 °C/W from junction to ambient.
Feature Summary
- Glass passivated chip junction for enhanced reliability
- High case dielectric strength suitable for PCB mounting
- Compliant with UL recognition standards
Applications
- Switching mode power supplies (SMPS)
- Power adapters
- Lighting applications
Procurement Notes
Verify the specific ordering code against official documentation to ensure correct voltage rating and packaging configuration. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer prior to procurement. Ensure storage conditions align with the specified temperature range to maintain component integrity.
Selection Notes
Select this component based on the required 200 V reverse voltage and 10 A continuous current capacity. Evaluate the KBU package dimensions and through-hole mounting requirements against the target circuit board layout. Consider the thermal performance metrics, specifically the junction-to-ambient resistance, when designing heat dissipation strategies for the application environment.
Part Context
This part belongs to the KBU1001G–KBU1007G series, which covers voltage ratings from 50 V to 1000 V while maintaining a consistent 10 A current rating. The 'T0' suffix typically denotes tray packaging in distributor catalogs, though the datasheet specifies standard tray packing for the base KBU10xG family. This series provides a standardized form factor for various voltage requirements.
Replacement Considerations
Cross-reference with other KBU100 series variants such as KBU1004G for higher voltage needs. Verify pinout compatibility and physical dimensions before substituting with generic equivalents. Ensure replacement parts meet the same thermal and electrical specifications.
FAQ
What is the maximum non-repetitive forward surge current?
The maximum non-repetitive forward surge current (IFSM) is 200 A for an 8.3 ms single half sine-wave superimposed on rated load.
What is the typical reverse current at elevated temperatures?
At a junction temperature of 125 °C, the typical reverse current per diode increases to 500 µA.
Is the component compliant with flammability standards?
Yes, the molding compound meets the UL 94V-0 flammability rating.
