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The KBU1003G T0G is a single-phase silicon bridge rectifier from the KBU100 series by Taiwan Semiconductor. It features a 10 A average forward current and a 200 V repetitive peak reverse voltage. The device utilizes a glass-passivated chip junction within a KBU through-hole package, supporting a maximum junction temperature of 150 °C. Electrical characteristics include a typical forward voltage of 1.1 V at 10 A and a reverse leakage current of 5 µA at rated voltage. The component handles a 200 A non-repetitive surge current and operates across a temperature range of -55 °C to +150 °C.
Verify the specific ordering code against manufacturer documentation to ensure correct voltage rating and packaging configuration. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer prior to procurement. Ensure storage conditions align with the specified temperature limits to maintain component integrity.
Select this component for circuits requiring a 10 A current capacity and 200 V blocking voltage in a standard through-hole form factor. Evaluate thermal management requirements based on the 25 °C/W junction-to-ambient resistance. Ensure the application environment remains within the -55 °C to +150 °C operating range for optimal performance.
This part belongs to the KBU1001G–KBU1007G series, which offers standardized 10 A bridge rectifiers with varying reverse voltage ratings from 50 V to 1000 V. All variants share identical mechanical dimensions, thermal characteristics, and package types, differing primarily in their peak reverse voltage specifications.
Compatible substitutes include other 10 A, 200 V single-phase bridge rectifiers in the KBU package. Verify pinout compatibility and thermal resistance values when considering alternatives from different manufacturers.