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The KBU4D-M3/P is a single-phase bridge rectifier from Vishay General Semiconductor, utilizing standard silicon technology. It features a peak repetitive reverse voltage of 200 V and an average forward rectified current of 4 A per leg. The forward voltage drop is specified at 950 mV when conducting 4 A, with a maximum reverse leakage current of 5 µA at 200 V. Designed for through-hole mounting in the KBU (4-SIP) package, it operates within a junction temperature range of -50°C to 150°C.
Verify the specific suffix designation against official Vishay documentation to confirm package dimensions and marking details. Ensure compatibility with existing PCB footprints designed for the KBU form factor. Cross-reference electrical parameters with system requirements before finalizing procurement decisions.
Select this component for applications requiring a 200 V rating and 4 A continuous current capacity in a through-hole configuration. Consider the 950 mV forward voltage drop for thermal management calculations. Verify that the operating environment stays within the specified -50°C to 150°C junction temperature range.
This part belongs to Vishay's KBU series of glass-passivated bridge rectifiers. It shares the same electrical characteristics as the KBU4D-M3/A variant but may differ in packaging or ordering specifications. The series is known for its ruggedness and suitability for general-purpose rectification tasks.
The KBU4D-M3/P is listed as a parameter-equivalent alternative to the KBU4D-M3/A. Both parts share identical electrical ratings and physical footprint, allowing for direct substitution in designs where the original part is unavailable.
The maximum forward voltage drop is 950 mV at an average forward current of 4 A.
Yes, it is rated for a junction temperature range of -50°C to 150°C.
It utilizes a glass passivated junction structure for enhanced reliability and low leakage current.