KSD1944TU

Single Bipolar Transistors Overview

The KSD1944TU is an NPN epitaxial silicon transistor manufactured by onsemi, formerly Fairchild Semiconductor. It features a collector-emitter voltage (VCEO) of 60 V and a collector-base voltage (VCBO) of 80 V. The device supports a maximum continuous collector current of 3 A and dissipates up to 30 W at a case temperature of 25°C. DC current gain (hFE) ranges from 400 to 2000 under specified test conditions. The component utilizes a TO-220F through-hole package with a junction temperature rating of 150°C.

Single Bipolar Transistors Feature Summary

• High DC current gain ranging from 400 to 2000 for efficient signal amplification
• Robust power handling capability with 30 W dissipation rating
• Epitaxial silicon construction for reliable switching performance

Single Bipolar Transistors Applications

• Audio amplifier circuits
• Power linear applications
• General-purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify the manufacturer origin carefully, as the part was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm that the specific revision matches the required datasheet specifications. Ensure the TO-220F package dimensions align with the target PCB layout constraints. Check for any lifecycle status updates regarding availability or obsolescence.

Single Bipolar Transistors Selection Notes

Select this component when high current gain is critical for low drive requirements. The 60 V collector-emitter rating suits moderate voltage switching tasks. Consider the thermal management needs associated with the 30 W power dissipation limit in the TO-220F package. Verify compatibility with the intended operating temperature range up to 150°C junction temperature.

Single Bipolar Transistors Part Context

This transistor belongs to the family of high-gain power transistors designed for audio and switching duties. It complements other bipolar junction transistors offering similar voltage and current ratings but with distinct gain characteristics. The TO-220F package provides a cost-effective solution for through-hole mounting in industrial and consumer electronics.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the 60 V VCEO, 3 A IC, and TO-220F package constraints.