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The KTA1170GVAE-TB is a Power Over Ethernet (PoE) switch IC designed for Powered Devices (PD) compliant with IEEE Std. 802.3bt. It integrates a dual MOSFET bridge rectifier and transient voltage suppression (TVS) protection within an 8-WDFN package. The device supports a maximum operating supply voltage of 48 V and delivers up to 90 W output power. It features a maximum on-resistance of 300 mOhms and includes current limiting set at 600 mA. The component operates reliably across a temperature range from -40°C to +125°C, utilizing surface mount installation.
Verify the specific suffix 'GVAE' against the manufacturer's official datasheet to confirm pinout and electrical characteristics match design requirements. Ensure the WDFN-8 package dimensions align with PCB footprint constraints. Confirm RoHS compliance status and moisture sensitivity level prior to assembly planning. Cross-reference the lead time with current production schedules as availability may vary.
Select this component when designing IEEE 802.3bt Powered Devices requiring integrated rectification and surge protection. The 300 mOhms on-resistance minimizes conduction losses in high-current paths. The wide operating temperature range suits industrial environments. Consider the 600 mA current limit for load protection needs. The compact 8-WDFN package aids in space-constrained layouts.
This part belongs to the Kinetic Technologies KTA1170 series of PoE/LAN power switch ICs. It is categorized under Power Switch ICs and specifically targets Powered Device applications. The series focuses on integrating multiple power management functions into single packages to simplify system design and reduce component count in network infrastructure equipment.
No public confirmed substitute part numbers are available in the provided documentation.