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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDG 8MINIDIP
- Series:-
- Mfr:STMicroelectronics
- Package:Tube
- Driven Configuration:Half-Bridge
- Channel Type:Synchronous
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel)
- Voltage - Supply:14.6V ~ 16.6V
- Logic Voltage - VIL, VIH:1.5V, 3.6V
- Current - Peak Output (Source, Sink):400mA, 650mA
- Input Type:Inverting
- Rise / Fall Time (Typ):50ns, 30ns
- Operating Temperature:-45°C ~ 125°C (TJ)
- Mounting Type:Through Hole
- Package / Case:8-DIP (0.300", 7.62mm)
- Supplier Device Package:8-Mini DIP
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):600 V
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Overview
The L6384 is a high-voltage half-bridge gate driver manufactured by STMicroelectronics using BCD technology. It integrates dedicated high-side and low-side driving inputs for N-channel power MOSFETs or IGBTs with a voltage rail up to 600 V. The device features an integrated bootstrap diode, UVLO on both sides, and internal deadtime for anti-cross-conduction protection. Logic inputs are CMOS/TTL compatible down to 3.3 V. Key electrical parameters include a peak output current of 650 mA, rise/fall times of 50 ns/30 ns, operating supply voltage range of 11.5 V to 16.6 V, and dV/dt immunity of ±50 V/ns.
Feature Summary
- Integrated bootstrap diode for compact design
- CMOS/TTL logic input compatibility down to 3.3 V
- Internal deadtime generation for cross-conduction protection
- High dV/dt transient immunity across full temperature range
Applications
- Driving half-bridge power stages with N-channel MOSFETs
- Driving half-bridge power stages with IGBTs
- High-voltage motor control applications
- Industrial inverter systems
Procurement Notes
Verify the specific package variant (SOIC-8 or DIP-8) and suffix code against the official datasheet. Confirm that the selected part number matches the required pin configuration and thermal characteristics. Ensure the supplier provides valid traceability documentation. Check for RoHS compliance status as per the manufacturer's latest release notes before finalizing procurement orders.
Selection Notes
Select this component when a single-chip solution for high-voltage half-bridge driving is required. It is suitable for designs needing integrated bootstrap functionality and robust dV/dt immunity. Consider the 600 V rail capability and 650 mA peak drive current. Verify interface compatibility with the controlling microcontroller logic levels. Evaluate thermal dissipation requirements based on the chosen package type.
Part Context
The L6384 belongs to the L638xE series of high-voltage gate drivers from STMicroelectronics. These devices utilize BCD offline technology to provide reliable performance in demanding power electronics environments. The series includes variants with different packaging options and functional configurations, serving as core components for efficient power stage management in industrial and automotive applications.
Replacement Considerations
Compatible alternatives within the same family include L6385E, L6387E, L6388E, and L6389E. These parts share similar high-voltage capabilities but may differ in specific features such as deadtime settings or UVLO thresholds. Verify pinout compatibility and functional equivalence before substitution.
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