L6384E

L6384E

  • Description:IC GATE DRVR HALF-BRIDGE 8DIP
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube

SKU:8e53f3d75e3d Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IC GATE DRVR HALF-BRIDGE 8DIP
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube
  • Driven Configuration:Half-Bridge
  • Channel Type:Synchronous
  • Number of Drivers:2
  • Gate Type:IGBT, MOSFET (N-Channel)
  • Voltage - Supply:14.6V ~ 16.6V
  • Logic Voltage - VIL, VIH:1.5V, 3.6V
  • Current - Peak Output (Source, Sink):400mA, 650mA
  • Input Type:Inverting
  • Rise / Fall Time (Typ):50ns, 30ns
  • Operating Temperature:-45°C ~ 125°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:8-DIP (0.300", 7.62mm)
  • Supplier Device Package:8-DIP
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):600 V

Download product information

L6384E

Overview

The L6384E is a high-voltage half-bridge gate driver manufactured using BCD offline technology. It drives power MOSFET or IGBT devices with a floating high-side section supporting voltage rails up to 600 V. The device outputs sink 650 mA and source 400 mA, featuring switching times of 50 ns rise and 30 ns fall with a 1 nF load. Logic inputs are CMOS/TTL compatible. Key features include integrated bootstrap diode, adjustable deadtime via an external resistor on the DT/SD pin, undervoltage lockout, and a VCC voltage clamp typically at 15.6 V. It operates within a temperature range of -45 °C to +125 °C.

Feature Summary

  • High-voltage rail capability up to 600 V for driving half-bridge configurations
  • Integrated bootstrap diode for compact and reliable circuit design
  • Adjustable deadtime function to prevent output cross-conduction
  • CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down

Applications

  • Driving half-bridge power MOSFETs
  • Driving half-bridge IGBT devices
  • Offline power supply applications

Procurement Notes

Verify the specific package variant required, as the L6384E series includes DIP-8 and SO-8 options in tube packaging, alongside tape and reel formats. Confirm that the selected part number matches the intended mounting style and handling requirements for your production line. Ensure compatibility with the system's logic voltage levels given the CMOS/TTL input specifications.

Selection Notes

Select this component when a high-voltage half-bridge driver is needed with integrated bootstrap functionality. The single-input configuration simplifies control interfacing while ensuring matched delays between high-side and low-side sections. Consider the adjustable deadtime feature for optimizing switching frequency and preventing shoot-through currents in high-frequency operations.

Part Context

The L6384E belongs to the L6384E series of high-voltage gate drivers from STMicroelectronics. It is designed for robust performance in demanding power electronics environments. The device utilizes BCD technology to integrate high-voltage capabilities with standard logic interfaces, making it suitable for various industrial and consumer power conversion applications requiring reliable half-bridge driving.

Replacement Considerations

L6384ED

FAQ

How is the deadtime adjusted?

The deadtime is tunable by the user through an external resistor connected to the DT/SD pin.

What is the maximum voltage rail supported by the high-side section?

The high-side (floating) section can work with a voltage rail up to 600 V.

L6384EL6384E

Click on the inquiry