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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8SO
- Series:-
- Mfr:STMicroelectronics
- Package:Tube
- Driven Configuration:Half-Bridge
- Channel Type:Synchronous
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel)
- Voltage - Supply:14.6V ~ 16.6V
- Logic Voltage - VIL, VIH:1.5V, 3.6V
- Current - Peak Output (Source, Sink):400mA, 650mA
- Input Type:Inverting
- Rise / Fall Time (Typ):50ns, 30ns
- Operating Temperature:-45°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):600 V
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Overview
The L6384ED is a high-voltage half-bridge gate driver manufactured using BCD offline technology. It drives power MOSFETs or IGBTs with a floating high-side section supporting up to 600 V rails. The device features dual outputs capable of sourcing 400 mA and sinking 650 mA, ensuring robust switching performance. Integrated protection includes undervoltage lockout (UVLO) and a voltage clamp on the VCC supply. Logic inputs are CMOS/TTL compatible, and an internal bootstrap diode simplifies circuit design.
Feature Summary
- High-voltage operation supporting floating high-side sections up to 600 V
- Integrated bootstrap diode for compact and reliable half-bridge configurations
- User-tunable deadtime function via external resistor to prevent cross-conduction
- CMOS/TTL Schmitt trigger inputs with hysteresis for noise immunity
Applications
- Driving half-bridge power MOSFET or IGBT devices in offline converters
- Industrial motor control applications requiring high dV/dt immunity
- Power supply designs utilizing high-voltage switching topologies
Procurement Notes
Verify the specific package variant required, as the L6384E series includes DIP-8 and SO-8 options. Confirm that the ED suffix corresponds to the intended tape and reel or tube packaging configuration for your assembly process. Ensure compatibility with the system's logic voltage levels given the CMOS/TTL input requirements. Check for availability of the integrated bootstrap diode feature if space constraints are critical.
Selection Notes
Select this component when a single-input half-bridge driver with built-in deadtime is required. It is suitable for applications needing high current drive capability for fast-switching power devices. Consider the integrated bootstrap diode to reduce external component count. Ensure the operating temperature range meets the application's thermal requirements.
Part Context
The L6384ED belongs to the L6384E family of high-voltage gate drivers from STMicroelectronics. This family utilizes BCD technology to integrate high-voltage capabilities with low-voltage logic control. The L6384E specifically provides a single-input configuration with tunable deadtime, distinguishing it from parallel-input variants like the L6385E which allows independent control of high and low sides.
Replacement Considerations
The L6385E offers similar electrical characteristics but provides two independent inputs for simultaneous high-side and low-side driving, rather than the single-input configuration with deadtime found in the L6384E.
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