L6385

L6385

$0.89
  • Description:IC GATE DRVR HALF-BRIDG 8MINIDIP
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube

SKU:ac08d5973423 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC GATE DRVR HALF-BRIDG 8MINIDIP
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube
  • Driven Configuration:Half-Bridge
  • Channel Type:Independent
  • Number of Drivers:2
  • Gate Type:IGBT, MOSFET (N-Channel)
  • Voltage - Supply:17V (Max)
  • Logic Voltage - VIL, VIH:1.5V, 3.6V
  • Current - Peak Output (Source, Sink):400mA, 650mA
  • Input Type:Inverting
  • Rise / Fall Time (Typ):50ns, 30ns
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:8-DIP (0.300", 7.62mm)
  • Supplier Device Package:8-Mini DIP
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):600 V

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L6385

Overview

The L6385E is a high-voltage half-bridge gate driver manufactured using BCD offline technology, designed to drive power MOSFETs or IGBTs with a voltage rail up to 600 V. It features independent high-side and low-side outputs capable of sourcing 400 mA and sinking 650 mA. The device includes an integrated bootstrap diode, CMOS/TTL compatible Schmitt trigger inputs, and undervoltage lockout protection for both driving sections. Switching times are specified as 50 ns rise and 30 ns fall with a 1 nF load, operating within a temperature range of -45°C to +125°C.

Feature Summary

  • High-voltage floating section supports rails up to 600 V
  • Integrated bootstrap diode for compact design
  • CMOS/TTL compatible logic inputs with hysteresis
  • Undervoltage lockout on both high-side and low-side sections

Applications

  • Driving half-bridge power stages with N-channel MOSFETs
  • Driving half-bridge power stages with IGBTs
  • Motor control applications requiring high-side/low-side configuration
  • Electronic ballast full bridge stages

Procurement Notes

Verify the specific ordering suffix (e.g., ED, ED013TR) to confirm package type and reel quantity. Confirm that the selected variant matches the required input logic levels and output current capabilities for the target power switch. Ensure compatibility with the intended voltage rail and thermal management requirements.

Selection Notes

Select based on the required voltage rail, which reaches 600 V, and the need for an integrated bootstrap diode to simplify layout. Consider the input logic compatibility with the controlling microcontroller and the specific switching speed requirements defined by the rise and fall times under load conditions.

Part Context

The L6385E belongs to the L638xE series of high-voltage gate drivers from STMicroelectronics. These devices are part of a portfolio including variants like L6387E, L6388E, and L6389E, offering different functionalities such as internal deadtime or interlocking. They share common manufacturing technology and core driver characteristics.

Replacement Considerations

Compatible substitutes within the same family include L6387E, L6388E, and L6389E. Verify functional differences such as the presence of internal deadtime or anti-cross-conduction interlocking before substitution.

L6385L6385
$0.89
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