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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8SO
- Series:-
- Mfr:STMicroelectronics
- Package:Tube
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel)
- Voltage - Supply:17V (Max)
- Logic Voltage - VIL, VIH:1.5V, 3.6V
- Current - Peak Output (Source, Sink):400mA, 650mA
- Input Type:Inverting
- Rise / Fall Time (Typ):50ns, 30ns
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):600 V
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Overview
The L6385D is a high-voltage half-bridge gate driver manufactured by STMicroelectronics using BCD offline technology. It drives N-channel power MOSFETs or IGBTs with a floating high-side section supporting voltage rails up to 600 V. The device provides independent outputs capable of sourcing 400 mA and sinking 650 mA, allowing simultaneous high-state driving for asymmetrical configurations. Logic inputs are CMOS/TTL compatible. Key features include an integrated bootstrap diode, UVLO protection on both sections, and dV/dt immunity of ±50 V/ns.
Feature Summary
- Integrated bootstrap diode for compact design
- High voltage rail capability up to 600 V
- CMOS/TTL Schmitt trigger inputs with hysteresis
- Undervoltage lockout on lower and upper driving sections
Applications
- Driving half-bridge power stages with N-channel MOSFETs
- Driving half-bridge power stages with IGBTs
- Asymmetrical half-bridge configurations
- Offline power supply applications
Procurement Notes
Verify the specific suffix 'D' against official STMicroelectronics documentation to confirm package type and tape/reel specifications. Ensure compatibility with the required operating temperature range and logic voltage levels. Cross-reference the part number with current availability status as product lifecycles may change. Confirm that the integrated bootstrap diode meets the application's reverse recovery requirements.
Selection Notes
Select this component when a single-chip solution for high-voltage half-bridge driving is required. It is suitable for designs needing independent high-side and low-side control without external bootstrap diodes. Consider its 600 V rating and current drive capabilities for medium-power switching applications. Verify that the input logic levels match the controlling microcontroller or DSP interface.
Part Context
The L6385D belongs to the L638xE series of high-voltage gate drivers from STMicroelectronics. This family utilizes BCD technology to integrate high-voltage components with standard logic interfaces on a single chip. The series is designed to simplify the layout and reduce the bill of materials for half-bridge converter topologies by embedding essential protection and driving functions.
Replacement Considerations
The L6385E is a direct functional equivalent within the same series, offering identical electrical characteristics and pinout. Other members of the L638xE family may serve as alternatives if their specific drive currents or deadtime features align with the design requirements.
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