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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8SO
- Series:-
- Mfr:STMicroelectronics
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel)
- Voltage - Supply:17V (Max)
- Logic Voltage - VIL, VIH:1.5V, 3.6V
- Current - Peak Output (Source, Sink):400mA, 650mA
- Input Type:Inverting
- Rise / Fall Time (Typ):50ns, 30ns
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):600 V
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Overview
The L6385D013TR is a high-voltage half-bridge gate driver IC manufactured by STMicroelectronics, designed for driving N-channel power MOSFETs and IGBTs. It utilizes BCD 'offline' technology to support floating high-side operation up to 600 V. The device features dual drivers with peak output currents of 400 mA source and 650 mA sink. It operates on a supply voltage range from -300 mV to 17 V, with typical rise and fall times of 50 ns and 30 ns respectively. The component is housed in an 8-SOIC package and supports CMOS/TTL logic inputs.
Feature Summary
- High-voltage capability supporting floating high-side voltage rails up to 600 V
- Robust dV/dt immunity rated at ±50 V/nsec for reliable switching performance
- Integrated internal bootstrap diode simplifies circuit design requirements
- CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down resistors
Applications
- Driving N-channel power MOSFETs in high-side configurations
- Driving IGBTs in industrial power conversion systems
- High-voltage H-Bridge driver circuits
- Offline power management applications requiring isolated control
Procurement Notes
Verify the specific suffix D013TR against current manufacturer catalogs as availability may vary. Confirm RoHS compliance status and lead times directly with authorized distributors. Ensure the ordering part number matches the required packaging format, such as reel or cut tape, to avoid logistical discrepancies during procurement.
Selection Notes
Select this component when a high-voltage half-bridge solution is required for MOSFET or IGBT control. The integrated bootstrap diode and high dV/dt immunity reduce external component count and improve noise tolerance. Verify that the input logic levels align with the system's CMOS or TTL standards and ensure the operating temperature range meets the application's thermal requirements.
Part Context
This part belongs to the L6385E series of high-voltage gate drivers from STMicroelectronics. It is specifically engineered for offline applications using BCD technology. The device provides independent high-side and low-side drive channels within a compact surface-mount package, serving as a critical interface between low-voltage logic controllers and high-power switching elements.
Replacement Considerations
The L6384ED013TR is a related variant within the same family, offering similar half-bridge functionality. Verify pin compatibility and electrical specifications before substitution. Note that differences in supply voltage ranges or static current consumption may exist between these models.
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