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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8DIP
- Series:-
- Mfr:STMicroelectronics
- Package:Tube
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel)
- Voltage - Supply:17V (Max)
- Logic Voltage - VIL, VIH:1.5V, 3.6V
- Current - Peak Output (Source, Sink):400mA, 650mA
- Input Type:Inverting
- Rise / Fall Time (Typ):50ns, 30ns
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:8-DIP (0.300", 7.62mm)
- Supplier Device Package:8-DIP
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):600 V
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Overview
The L6385E is a high-voltage half-bridge gate driver manufactured using BCD offline technology, designed to drive power MOSFETs or IGBTs. It supports a high-side floating voltage rail up to 600 V and features an integrated bootstrap diode for compact design. The device provides independent high-side and low-side outputs capable of sourcing 400 mA and sinking 650 mA. Logic inputs are CMOS/TTL compatible with Schmitt trigger hysteresis. Key protections include undervoltage lockout on both sections and dV/dt immunity of ±50 V/ns across the full temperature range.
Feature Summary
- High-voltage capability supporting rails up to 600 V for floating high-side operation
- Integrated bootstrap diode eliminates external component requirements for bootstrap circuitry
- CMOS/TTL compatible logic inputs with Schmitt trigger hysteresis for robust interfacing
- Undervoltage lockout protection on both high-side and low-side driving sections
Applications
- Half-bridge power stages for N-channel MOSFETs or IGBTs
- Motor control systems requiring high-side and low-side switching
- Electronic ballasts for HID metal halide lamps
- Inverter circuits in power conversion applications
Procurement Notes
Verify package availability as the L6385E series includes DIP-8, SO-8 tube, and tape/reel options. Confirm specific suffixes match required packaging. Check RoHS compliance status via official documentation. Ensure supply chain sources provide genuine STMicroelectronics components. Validate operating temperature range requirements against datasheet specifications before ordering.
Selection Notes
Select this driver for applications requiring high dV/dt immunity and integrated bootstrap functionality. Suitable for designs needing independent control of high and low-side outputs without deadtime constraints. Consider output current capabilities when sizing power switches. Verify input logic levels align with controlling microcontrollers or Hall-effect interfaces. Evaluate thermal performance based on power dissipation limits in the target environment.
Part Context
The L6385E belongs to the L638xE family of high-voltage gate drivers from STMicroelectronics. This family shares common BCD offline technology and functional characteristics, including 600 V rail support and integrated bootstrap diodes. Other members like L6387E, L6388E, and L6389E offer similar core features with potential variations in protection or timing. The EVALSTDRV600HB8 evaluation kit supports testing these devices in half-bridge configurations.
Replacement Considerations
Compatible substitutes within the same family include L6387E, L6388E, and L6389E. These parts share identical high-voltage capabilities and basic driver functions. Verify pin compatibility and specific feature differences such as deadtime or interlocking before substitution. Consult official datasheets for detailed electrical parameter comparisons.
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